Semiconductor device and method of fabricating the same

Abstract

A semiconductor device and methods of fabricating the same, wherein insulation layers are interposed to sequentially dispose the semiconductor device on a semiconductor substrate. The semiconductor device includes a first conductive plate, a second conductive plate, a third conductive plate, and a fourth conductive plate. At least two of the first, second, third and fourth conductive plates are electrically connected and constitute at least two capacitors.

1 . A semiconductor device comprising:
 a first conductive plate and a second conductive plate;   a first insulation layer interposed between the first conductive plate and the second conductive plate;   an interconnection electrically connected to one of the first conductive plate and the second conductive plate;   a third conductive plate integrally formed with the interconnection, the third conductive plate constituting a capacitor with at least one of the first or the second conductive plates.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first insulation layer comprises a high-K dielectric material. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the first and the second conductive plates comprise a Ti or Ta based metal. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the interconnection and the third conductive plate comprise copper. 
     
     
         5 . The semiconductor device of  claim 4 , further comprising a contact integrally formed with the interconnection. 
     
     
         6 . A semiconductor device comprising:
 a first metal electrode;   a second metal electrode;   a first insulation layer between the first metal electrode and the second metal electrode;   a first metal interconnection electrically connected to the first metal electrode;   a second metal interconnection electrically connected to the second metal electrode; and   a third metal electrode integrally formed with one of the first metal interconnection and the second interconnection.   
     
     
         7 . The semiconductor device of  claim 6 , further comprising:
 a first metal contact made of the same material as the first metal interconnection; and   a second metal contact made of the same material as the second metal interconnection.   
     
     
         8 . The semiconductor device of  claim 6 , wherein the first insulation layer comprises a high-K dielectric material. 
     
     
         9 . The semiconductor device of  claim 6 , wherein the first metal electrode and the second metal electrode comprise a Ti or Ta based metal. 
     
     
         10 . The semiconductor device of  claim 6 , wherein the first metal interconnection, the second metal interconnection, and the third metal electrode comprise copper. 
     
     
         11 . The semiconductor device of  claim 10 , further comprising a second insulation layer made of a copper diffusion barrier material. 
     
     
         12 . The semiconductor device of  claim 11 , wherein the second insulation layer comprises at least one of SiN, SiC, or SiCN.