Hybrid-guided block copolymer assembly

Abstract

A method for nano-patterning includes imprinting features in a resist with an imprint mold to form one or more topographic surface patterns on the imprinted resist. A a block copolymer (“BCP”) material is deposited on the imprinted resist, wherein a molecular dimension L 0 of the BCP material correlates by an integer multiple to a spacing dimension of the one or more topographic surface patterns on the imprinted resist. The deposited BCP is annealed and at least a portion of the annealed BCP is removed, forming a template having discrete domains.

1 . A method comprising:
 imprinting features in a resist with an imprint mold to form one or more topographic surface patterns on the resulting imprinted resist;   depositing a block copolymer (“BCP”) material on the imprinted resist, wherein a molecular dimension L 0  of the BCP material correlates by an integer multiple to a spacing dimension of the one or more topographic surface pattern on the resulting imprinted resist;   annealing the deposited BCP ; and   removing at least a portion of the annealed BCP to form a template having discrete domains is formed.   
     
     
         2 . The method of  claim 1 , further comprising treating imprinted resist the imprinted resist to form a chemical surface pattern. 
     
     
         3 . The method of  claim 2 , wherein the treating of the imprinted resist comprises exposing the imprinted resist to oxygen plasma. 
     
     
         4 . The method of  claim 1 , further comprising transferring the imprinted resist onto the substrate. 
     
     
         5 . The method of  claim 1 , wherein the imprinting of the resist comprises applying a UV imprinting process. 
     
     
         6 . The method of  claim 1 , wherein the imprinting of the resist comprises applying a thermal imprinting process. 
     
     
         7 . The method of  claim 1 , wherein the imprinting of the resist comprises applying an inking imprinting process. 
     
     
         8 . The method of  claim 1 , wherein the BCP material is selected from the group consisting of polystyrene-block-polymethylmethacrylate (PS-b-PMMA), polystyrene-block-poly2-vinylpyridine, polystyrene-block-poly4-vinylpyridine, polystyrene-block-polyethyleneoxide, polystyrene-block-polyisoprene, polystyrene-block-butadiene, and mixtures thereof. 
     
     
         9 . The method of  claim 1 , wherein the BCP material is selected from the group of BCP materials consisting of polystyrene-block-polydimethylsiloxane (PS-b-PDMS), polystyrene-block-polyferrocenylsilane, and mixtures thereof. 
     
     
         10 . The method of  claim 1 , wherein the removing of at least a portion of the annealed BCP forms the template having pitch of 5-100 nm. 
     
     
         11 . The method of  claim 1 , wherein the removing of at least a portion of the annealed BCP forms the template having a bit density of at least 1 Tdpsi. 
     
     
         12 . The method of  claim 1 , wherein the removing of at least a portion of the annealed BCP forms the template having at least one of a long-ranged laterally ordered 1D array and a long-ranged laterally ordered 2D array. 
     
     
         13 . The method of claim , wherein the one or more topographical surfaces comprises differing heights. 
     
     
         14 . The method of  claim 1 , further comprising using the template to pattern a second resist. 
     
     
         15 . The method of  claim 1 , further comprising using the template as a mask. 
     
     
         16 . An apparatus manufactured by the method of  claim 1 .