Two-phase cooling for light-emitting devices

Abstract

System, method, and apparatus for two phase cooling in light-emitting devices are disclosed. In one aspect of the present disclosure, an apparatus includes a light-emitting device and a two-phase cooling apparatus coupled to the light-emitting device. The coupling of the two-phase cooling apparatus and the light-emitting device is operatively configured such that thermal coupling between the light-emitting device and the two-phase cooling apparatus enables, when, in operation, heat generated from the light-emitting device to be absorbed by a substance of a first phase in the two-phase cooling apparatus to convert the substance to a second phase.

1 . A system, comprising:
 at least one die mounted on a cap layer, the die having formed thereon a light-emitting device,   the cap layer being physically configured to thermally couple heat generated from the light-emitting device to a chamber suitable for liquid storage;   a layer having through-holes formed from liquid-permeable porous structures, the layer having a first side and a second side and wherein, one side is in contact with the chamber suitable for liquid storage; and   a vapor collection layer disposed over the second side of the layer having through-holes such that the through-holes are substantially unobstructed to substance flow;   wherein, when, in operation, vapor is generated at liquid menisci of the liquid-permeable porous structures.   
     
     
         2 . The system of  claim 1 , wherein the cap layer comprises one or more of, Kovar, Invar, copper tungsten alloy, silicon, germanium, diamond, SiC, AlN, Al, Al 2 O 3  and/or CMOS-grade silicon. 
     
     
         3 . The system of  claim 1 , wherein the cap layer comprises a semiconductor-based carrier wafer. 
     
     
         4 . The system of  claim 1 , wherein the cap layer comprises one or more regions containing doped n-type semiconductor material. 
     
     
         5 . The system of  claim 4  wherein the region containing doped n-type semiconductor material is wire bonded to a region within the cap layer containing dope p-type semiconductor material. 
     
     
         6 . The system of  claim 4  wherein a zener diode is formed on the cap layer by thin film fabrication of a semiconductor material. 
     
     
         7 . The system of  claim 1 , wherein the light-emitting device is a light emitting diode or a laser. 
     
     
         8 . The system of  claim 1 , wherein the porous structures are coherent silicon pores of a high length to diameter ratio. 
     
     
         9 . The system of  claim 1 , wherein the high length to diameter ratio is approximately from 60 to 205. 
     
     
         10 . The system of  claim 1 , wherein, the die is mounted on the cap layer via solder. 
     
     
         11 . The system of  claim 1 , wherein, the chamber is formed within the cap layer or coupled to the cap layer. 
     
     
         12 . The system of  claim 1 , wherein, the vapor collection layer is further coupled to a manifold layer having formed therein or is coupled to a vapor port though which vapor exits. 
     
     
         13 . The system of  claim 1 , further comprising,
 an insulating substrate that surrounds the die; and   a lens attached to the insulating substrate that encapsulates the die; and   phosphor material disposed within a region between the die and the lens.   
     
     
         14 . The system of  claim 1 , further comprising, an electrostatic discharge circuitry electrically coupled to the light emitting device; wherein, the light emitting device is a light emitting diode (LED). 
     
     
         15 . The system of  claim 14 , wherein, the electrostatic discharge circuitry comprises a first diode connected to the light-emitting diode in parallel. 
     
     
         16 . The system of  claim 15 , further comprising a second diode electrically connected to the first diode. 
     
     
         17 . The system of  claim 15 , wherein, the first diode is a zener diode having a lower breakdown voltage than the light-emitting diode. 
     
     
         18 . The system of  claim 1 , wherein, when, in operation, the heat generated from the light-emitting device is at least a latent heat of the vapor generated at liquid menisci of the liquid-permeable porous structures. 
     
     
         19 . A method, comprising:
 forming a plurality of liquid-permeable porous structures in a semiconductor layer;   forming a metallic substrate;   attaching the metallic substrate and the semiconductor layer;   forming an insulating layer on the metallic substrate;   forming one or more cavities in the insulating layer;   patterning an insulating layer to form electrodes thereon; and   attaching a die to the metallic substrate, the die having formed thereon a light-emitting device.   
     
     
         20 . The method of  claim 19 , wherein, the die is wire bonded for electrical connection. 
     
     
         21 . The method of  claim 19 , further comprising:
 brazing a set of metallic layers to form a liquid distribution work and attaching the liquid distribution network to the semiconductor layer.   
     
     
         22 . The method of  claim 19 , further comprising:
 encapsulating the die using a tens attachment.   
     
     
         23 . The method of  claim 19 , wherein, the electrodes are formed by, one or more of, evaporation, sputtering, and electroplating. 
     
     
         24 . The method of  claim 19 , wherein:
 the insulating layer comprises glass and the electrodes are gold electrodes; and   the metallic substrate comprises copper.   
     
     
         25 . The method of  claim 19 , further comprising,
 bonding the insulating layer to the metallic substrate using solder alloy;   bonding the die to the metallic substrate using solder alloy; and   bonding the semiconductor layer to the metallic substrate.   
     
     
         26 . The method of  claim 19 , further comprising:
 forming the cavities by ultrasonic impact grinding;   forming a vapor chamber from a metallic material; and   forming a vapor port and brazing the vapor port to the vapor chamber to form the connection.   
     
     
         27 . The method of  claim 19 , further comprising:
 packaging a plurality of dies on the metallic substrate with a less than one inch spacing between the dies.   
     
     
         28 . A method, comprising:
 transferring a heat emitted from a light-emitting device to a chamber suitable for liquid storage;   phase-changing the liquid to a vapor at liquid menisci of a liquid-permeable porous structure;   moving the vapor to a condenser;   condensing the vapor to the liquid in the condenser; and   returning the liquid to the camber by a thermodynamic pressure difference across the liquid-permeable porous structure.   
     
     
         29 . The method of  claim 28 , further comprising:
 emitting a light having at least 10,000 lumens from each square inch of an emitting surface of the light-emitting device.   
     
     
         30 . The method of  claim 28 , where the liquid returns to the camber at least partial due to a gravity force.