Film for forming protective layer

Abstract

The present invention aims to provide a film for forming a protective layer that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer while suppressing an increase in the number of steps in the manufacture of a semiconductor device. This object is achieved by a film for forming a protective layer on a bumped wafer in which a low dielectric material layer is formed, including a support base, an adhesive layer, and a thermosetting resin layer, laminated in this order, wherein the melt viscosity of the thermosetting resin layer is 1×10 2 Pa·S or more and 2×10 4 Pa·S or less, and the shear modulus of the adhesive layer is 1×10 3 Pa or more and 2×10 6 Pa or less, when the thermosetting resin layer has a temperature in a range of 50 to 120° C.

1 . A film for forming a protective layer on a bumped wafer in which a low dielectric material layer is formed, comprising a support base, an adhesive layer, and a thermosetting resin layer, laminated in this order, wherein
 a melt viscosity of the thermosetting resin layer is 1×10 2  Pa·S or more and 2×10 4  Pa·S or less, and the shear modulus of the adhesive layer is 1×10 3  Pa or more and 2×10 6  Pa or less when a temperature of the thermosetting resin layer is in a range of 50 to 120° C.   
     
     
         2 . The film for forming the protective layer according to  claim 1 , wherein a thickness of the thermosetting resin layer is 5 μm or more and 200 μm or less. 
     
     
         3 . The film for forming the protective layer according to  claim 1 , wherein the thermosetting resin layer contains an epoxy resin and a phenol resin, and the adhesive layer contains an acrylic polymer. 
     
     
         4 . The film for forming the protective layer according to  claim 2 , wherein the thermosetting resin layer contains an epoxy resin and a phenol resin, and the adhesive layer contains an acrylic polymer.