US2012208304A1PendingUtilityA1

Process of manufacturing luminescent device

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Assignee: KUWABARA HIDEAKIPriority: Jun 8, 2001Filed: Feb 15, 2012Published: Aug 16, 2012
Est. expiryJun 8, 2021(expired)· nominal 20-yr term from priority
Inventors:Hideaki Kuwabara
H10K 59/805H10K 71/12H10K 71/166H10K 71/00H10K 85/113H10K 85/60H10K 85/341H10K 85/114H10K 71/18H10K 85/115H10K 85/111H10K 71/13H10K 50/11H10K 85/10H10K 50/805
55
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Claims

Abstract

A method for manufacturing a luminescent device including a luminescent layer between a pair of electrodes is provided. The luminescent layer is formed by spreading a solution including an iridium complex. The solution is in a fog state by hitting a heated gas to the solution ejected from a nozzle arranged in a chamber. A substrate over which the luminescent layer is formed is heated while the luminescent layer is formed.

Claims

exact text as granted — not AI-modified
1 . A method for manufacturing a luminescent device, comprising the steps of:
 forming a thin film transistor over a substrate;   forming a first electrode over the thin film transistor;   forming a first organic compound layer over the first electrode;   forming a second organic compound layer over the first organic compound layer;   forming a third organic compound layer over the second organic compound layer, wherein the third organic compound layer is a luminescent layer;   forming a fourth organic compound layer over the third organic compound layer; and   forming a second electrode over the fourth organic compound layer,   wherein the fourth organic compound layer and the second electrode are formed by a vapor deposition method,   wherein the third organic compound layer is formed by spreading a solution in a fog state made by hitting a heated gas to the solution ejected from an ejection outlet of a nozzle arranged in a chamber,   wherein the solution comprises an iridium complex, and   wherein the substrate is heated at least during formation of the third organic compound layer.   
     
     
         2 . The method for manufacturing a luminescent device according to  claim 1 ,
 wherein a skirt is arranged in the chamber so as to surround the nozzle, and   wherein the skirt is fixed to the chamber.   
     
     
         3 . The method for manufacturing a luminescent device according to  claim 2 , wherein the heated gas is discharged into the skirt. 
     
     
         4 . The method for manufacturing a luminescent device according to  claim 1 ,
 wherein the first electrode is an anode,   wherein the first organic compound layer is a hole implantation layer,   wherein the second organic compound layer is a hole transport layer,   wherein the fourth organic compound layer is an electron transport layer, and   wherein the second electrode is a cathode.   
     
     
         5 . The method for manufacturing a luminescent device according to  claim 1 , wherein the solution comprises toluene. 
     
     
         6 . The method for manufacturing a luminescent device according to  claim 1 , wherein the solution is a colloidal solution. 
     
     
         7 . The method for manufacturing a luminescent device according to  claim 1 , wherein the iridium complex is tris(2-phenylpyridine) iridium. 
     
     
         8 . The method for manufacturing a luminescent device according to  claim 1 , wherein the heated gas comprises at least one selected from the group consisting of nitrogen, argon, helium, and neon. 
     
     
         9 . The method for manufacturing a luminescent device according to  claim 1 , wherein the thin film transistor is a p-channel type. 
     
     
         10 . The method for manufacturing a luminescent device according to  claim 1 , further comprising the step of forming an organic resin film which covers an edge section of the first electrode, wherein the first organic compound layer is formed over the organic resin film. 
     
     
         11 . A method for manufacturing a luminescent device, comprising the steps of:
 forming a thin film transistor over a substrate;   forming a first electrode over the thin film transistor;   forming a first organic compound layer over the first electrode;   forming a second organic compound layer over the first organic compound layer;   forming a third organic compound layer over the second organic compound layer, wherein the third organic compound layer is a luminescent layer;   forming a fourth organic compound layer over the third organic compound layer; and   forming a second electrode over the fourth organic compound layer,   wherein the first organic compound layer and the second organic compound layer are formed by a coat method,   wherein the fourth organic compound layer and the second electrode are formed by a vapor deposition method,   wherein the third organic compound layer is formed by spreading a solution in a fog state made by hitting a heated gas to the solution ejected from an ejection outlet of a nozzle arranged in a chamber,   wherein the solution comprises an iridium complex, and   wherein the substrate is heated at least during formation of the third organic compound layer.   
     
     
         12 . The method for manufacturing a luminescent device according to  claim 11 ,
 wherein a skirt is arranged in the chamber so as to surround the nozzle, and   wherein the skirt is fixed to the chamber.   
     
     
         13 . The method for manufacturing a luminescent device according to  claim 12 , wherein the heated gas is discharged into the skirt. 
     
     
         14 . The method for manufacturing a luminescent device according to  claim 11 ,
 wherein the first electrode is an anode,   wherein the first organic compound layer is a hole implantation layer,   wherein the second organic compound layer is a hole transport layer,   wherein the fourth organic compound layer is an electron transport layer, and   wherein the second electrode is a cathode.   
     
     
         15 . The method for manufacturing a luminescent device according to  claim 11 , wherein the solution comprises toluene. 
     
     
         16 . The method for manufacturing a luminescent device according to  claim 11 , wherein the solution is a colloidal solution. 
     
     
         17 . The method for manufacturing a luminescent device according to  claim 11 , wherein the iridium complex is tris(2-phenylpyridine) iridium. 
     
     
         18 . The method for manufacturing a luminescent device according to  claim 11 , wherein the heated gas comprises at least one selected from the group consisting of nitrogen, argon, helium, and neon. 
     
     
         19 . The method for manufacturing a luminescent device according to  claim 11 , wherein the thin film transistor is a p-channel type. 
     
     
         20 . The method for manufacturing a luminescent device according to  claim 11 , further comprising the step of forming an organic resin film which covers an edge section of the first electrode, wherein the first organic compound layer is formed over the organic resin film. 
     
     
         21 . A method for manufacturing a luminescent device comprising a first electrode, a second electrode, and a film comprising an organic compound provided between the first electrode and the second electrode, comprising the step of:
 forming the film comprising the organic compound over the first electrode by:
 discharging a composition comprising a dispersion medium of liquid and a dispersed particulate of the organic compound in the dispersion medium; and 
 vaporizing the liquid by heating the composition in an inert gas atmosphere before the composition reaches the first electrode after the composition is discharged. 
   
     
     
         22 . The method for manufacturing a luminescent device according to  claim 21 , wherein the composition is charged. 
     
     
         23 . The method for manufacturing a luminescent device according to  claim 21 , wherein the composition is heated by hitting a heated nitrogen gas to the composition. 
     
     
         24 . The method for manufacturing a luminescent device according to  claim 21 , wherein the second electrode is one or more selected from the group consisting of lithium, aluminum, silver, magnesium, cesium, and calcium. 
     
     
         25 . The method for manufacturing a luminescent device according to  claim 21 , wherein the liquid is one or more selected from the group consisting of alcohol, toluene, and water. 
     
     
         26 . The method for manufacturing a luminescent device according to  claim 21 , wherein the organic compound is one or more selected from the group consisting of quinacridone, tris(2-phenylpyridine) iridium, and bathocuproine. 
     
     
         27 . The method for manufacturing a luminescent device according to  claim 21 , wherein the organic compound is one or more selected from the group consisting of poly(1,4-phenylenevinylene), poly(1,4-naphthalenevinylene), poly(2-phenyl-1,4-phenylenevinylene), polythiophene, poly(3-phenylthiophene), poly(1,4-phenylene), and poly(2,7-fluorene).

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