Securing Non Volatile Data In RRAM

Abstract

The various embodiments of the invention relate generally to semiconductors and memory technology. More specifically, the various embodiment and examples of the invention relate to memory devices, systems, and methods that protect data stored in one or more memory devices from unauthorized access. The memory device may include third dimension memory that is positioned on top of a logic layer that includes active circuitry in communication with the third dimension memory. The third dimension memory may include multiple layers of memory that are vertically stacked upon each other. Each layer of memory may include a plurality of two-terminal memory elements and the two-terminal memory elements can be arranged in a two-terminal cross-point array configuration. At least a portion of one or more of the multiple layers of memory may include an obfuscation layer configured to conceal data stored in one or more of the multiple layers of memory.

1 . A memory device, comprising:
 an integrated circuit die including a first portion having active circuitry fabricated on a semiconductor substrate of the die and a second portion including a plurality of memory layers in contact with and vertically fabricated directly above the semiconductor substrate;   a re-writeable non-volatile memory storage included in the second portion, the re-writeable two-terminal non-volatile memory storage electrically coupled with the active circuitry;   a memory storage controller included in the active circuitry and in electrical communication with and configured to access the re-writeable non-volatile memory storage; and   a device access determinator included in the active circuitry and in electrical communication with the non-volatile memory storage controller, the device access determinator being configured to
 determine a geographical location of the re-writeable non-volatile memory storage, and 
 grant access to the memory storage controller. 
   
     
     
         2 . The memory device of  claim 1 , wherein the re-writeable non-volatile memory storage includes a plurality of two-terminal cross-point arrays. 
     
     
         3 . The memory device of  claim 1 , wherein the re-writeable non-volatile memory storage includes a plurality of re-writeable non-volatile memory elements (ME's), with each ME having exactly two-terminals. 
     
     
         4 . The memory device of  claim 3 , wherein each ME includes an ion reservoir and a tunnel barrier that are electrically in series with each other and with the two terminals of the ME. 
     
     
         5 . The memory device of  claim 1 , wherein the device access determinator is further configured to revoke access to the memory storage controller. 
     
     
         6 . The memory device of  claim 1 , wherein the device access determinator includes
 a device communication interface configured to receive a signal, and   determination logic,   wherein the device access determinator is configured to use the signal to determine a geographical location of re-writeable non-volatile memory storage,   wherein the determination logic is configured to determine whether to grant access to the memory storage controller based on the geographical location of the re-writeable non-volatile memory storage.   
     
     
         7 . The memory device of  claim 6 , wherein the determination logic is configured to access proximity data. 
     
     
         8 . The memory device of  claim 6 , wherein the device access determinator is further configured to require a password to grant access to the memory storage controller. 
     
     
         9 . The memory device of  claim 1 , wherein one of the plurality of memory layers includes an obfuscation layer. 
     
     
         10 . The memory device of  claim 1 , wherein each of the plurality of memory layers includes a two-terminal cross-point array and each two-terminal cross-point array includes a plurality of re-writeable non-volatile memory elements (ME's), with each ME having exactly two-terminals. 
     
     
         11 . The memory device of  claim 1 , wherein an upper layer of the plurality of memory layers is configured to store either encrypted data or no data. 
     
     
         12 . A system for securing data, comprising:
 a signal communicating device operative to send an activation signal; and   a memory device including
 an integrated circuit die including a first portion comprised of a semiconductor substrate and a second portion in contact with and vertically fabricated directly above the first portion, 
 a re-writeable non-volatile memory storage positioned in the second portion and electrically coupled with active circuitry in the first portion, the active circuitry configured to access the re-writeable non-volatile memory storage, 
 a signal receiver included in the active circuitry and configured to receive the activation signal, and 
 determination logic included in the active circuitry and configured to determine a geographical location of the memory device, 
   wherein the memory device grants access to the re-writeable non-volatile memory storage as a function of the activation signal and the geographical location of the memory device.   
     
     
         13 . The system of  claim 12 , wherein the re-writeable non-volatile memory storage includes a plurality of memory layers that are in contact with one another, each memory layer including a two-terminal cross-point array, and each two-terminal cross-point array including a plurality of re-writeable non-volatile memory elements (ME's), with each ME having exactly two terminals. 
     
     
         14 . The system of  claim 12 , wherein the determination logic is configured to
 access data representing authorized geographical regions stored in the memory device, and   determine whether the activation signal includes positional data.   
     
     
         15 . A method for securing a memory device, comprising:
 determining a geographical location for the memory device as a function of signal data, the memory device including multiple layers of non-volatile memory in contact with and fabricated directly above a substrate including active circuitry electrically coupled with the multiple layers of non-volatile memory; and   granting access to the multiple layers of non-volatile memory based upon the geographical location being associated with at least a subset of proximity data, and   wherein each layer of non-volatile memory includes a plurality of re-writeable non-volatile memory elements (ME's), with each ME having exactly two terminals, and each ME including an ion reservoir and a tunnel barrier that are electrically in series with each other and with the two terminals of the ME.   
     
     
         16 . The method of  claim 15 , wherein the subset of proximity data comprises positional data and the signal data comprises authorization data. 
     
     
         17 . The method of  claim 15 , wherein determining the geographical location as the function of the signal data comprises associating the signal data from an activation signal with the subset of proximity data. 
     
     
         18 . The method of  claim 15  and further comprising: generating, in response to the granting access to the multiple layers of non-volatile memory, an acknowledgment signal configured to notify a source of the signal data. 
     
     
         19 . The method of  claim 18  further and comprising: generating an alert signal if the acknowledgment signal is not generated. 
     
     
         20 . The method of  claim 15  and further comprising:
 receiving a shutdown signal configured to revoke the access; and 
 revoking the access to the multiple layers of non-volatile memory.