System for utilization improvement of process chambers and method of operating thereof

Abstract

A substrate processing system for processing an essentially vertically oriented substrate is described. The system includes a first processing chamber having a first processing region and being adapted to deposit a first layer comprising a first material, a second processing chamber having a second processing region and being adapted to deposit a second layer over the first layer, the second layer comprising a second material, a third processing chamber having a third processing region and being adapted to deposit a layer comprising the second material, a transfer chamber providing essentially linear transport paths with the first, the second, and the third chambers, respectively, and a further chamber comprising a first and a second transportation track, wherein at least one of the first and second transportation tracks forms an essentially linear transportation path with the first processing chamber, wherein the first chamber is adapted to receive the substrate from the transfer chamber, and to deposit a further layer comprising the first material.

1 . A substrate processing system for processing an essentially vertically oriented substrate, comprising:
 a first processing chamber having a first processing region and being adapted to deposit a first layer comprising a first material;   a second processing chamber having a second processing region and being adapted to deposit a second layer over the first layer, the second layer comprising a second material;   a third processing chamber having a third processing region and being adapted to deposit a layer comprising the second material;   a transfer chamber providing essentially linear transport paths with the first, the second and the third chambers, respectively; and   a further chamber comprising a first and a second transportation track, wherein at least one of the first and second transportation tracks forms an essentially linear transportation path with the first processing chamber,   wherein the first chamber is adapted to receive the substrate from the transfer chamber, and to deposit a further layer comprising the first material.   
     
     
         2 . The system according to  claim 1 , wherein the transfer chamber is a rotation module. 
     
     
         3 . The system according to  claim 2 , wherein the transfer chamber is a vacuum rotation module for rotation substrate under a pressure below 10 mbar. 
     
     
         4 . The system according to  claim 1 , wherein the system comprises an inline processing system portion. 
     
     
         5 . The system according to  claim 4 , wherein the system is a hybrid system between an inline-processing system and a cluster processing system. 
     
     
         6 . The system according to  claim 1 , further comprising:
 a lateral displacement mechanism configured for lateral displacement of the substrate from the first transportation track to the second transportation track and vice versa.   
     
     
         7 . The system according to  claim 5 , wherein the lateral displacement mechanism is disposed in the further chamber. 
     
     
         8 . The system according to  claim 1 , further comprising:
 at least one load lock chamber comprising further portions of each of the first and the second transportation track, wherein the further portions are provided in extension of the first and second transportation track in the further chamber.   
     
     
         9 . The system according to  claim 1 , further comprising:
 at least one further chamber having a further processing region and being adapted to deposit a further layer comprising a third material, wherein the at last one further chamber is connected to the transfer chamber.   
     
     
         10 . The system according to  claim 9 , wherein the at least one further chamber are at least two further chambers, each being adapted to deposit the layer comprising the third material. 
     
     
         11 . The system according to  claim 1 , wherein the first material is selected from the group consisting of: molybdenum, molybdenum-alloys, platinum, platinum-alloys, gold, gold-alloys, titanium, titanium-alloys, silver, and silver-alloys. 
     
     
         12 . The system according to  claim 11 , wherein the first material is molybdenum, a molybdenum-alloy, titanium, or a titanium-alloy. 
     
     
         13 . The system according to  claim 1 , wherein the further chamber comprises a third transportation track. 
     
     
         14 . The system according to  claim 1 , wherein the first transportation track comprises a plurality of guiding elements for guiding in a transport direction, wherein the second transportation track comprises a plurality of guiding elements for guiding in the transport direction, and wherein the guiding elements of the first transportation track and the second transportation track are adapted for a first and second guiding position respectively such that the guiding positions are displaced in a direction perpendicular to the transport direction. 
     
     
         15 . The system according to  claim 14 , wherein the guiding elements of the first transportation track and the guiding elements of the second transportation track are provided along the transportation direction alternately. 
     
     
         16 . A method of depositing a layer stack in a substrate processing system having a first, a second and a third processing chamber, the method comprising:
 depositing a first layer comprising a first material in the first processing chamber over an essentially vertically oriented substrate;   depositing a second layer comprising a second material in one chamber selected from: the second processing chamber and the third processing chamber, wherein the second processing chamber and the third processing chamber are used in an essentially alternating manner; and   depositing a third layer comprising the first material in the first processing chamber, wherein the first, the second and the third processing chambers are connected to a transfer chamber with essentially linear transport paths; and laterally displacing a substrate between a first transportation track and a second transportation track in a further chamber.   
     
     
         17 . The method according to  claim 16 , wherein the first layer on a first substrate is deposited while the second layer on another substrate is deposited. 
     
     
         18 . The method according to  claim 16 , further comprising:
 rotating the substrate when transferring it from the first processing chamber to the second or third processing chamber.   
     
     
         19 . The method according to  claim 16 , further comprising:
 transferring two substrates simultaneously onto or off the first transportation track and the second transportation track.   
     
     
         20 . The method according to  claim 16 , wherein the first material is selected from the group consisting of: molybdenum, molybdenum-alloys, platinum, platinum-alloys, gold, gold-alloys, titanium, titanium-alloys, silver, and silver-alloys.