US2012218749A1PendingUtilityA1

Lighting-emitting device

37
Assignee: SU PO-JENPriority: Feb 24, 2011Filed: Jan 11, 2012Published: Aug 30, 2012
Est. expiryFeb 24, 2031(~4.6 yrs left)· nominal 20-yr term from priority
Inventors:Po-Jen Su
H10W 90/00H10H 20/851
37
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A light-emitting device including a substrate and a plurality of the semiconductor light-emitting diode dice having dominant wavelengths between 440 nm and 490 nm is disclosed. The semiconductor light-emitting diode dice are disposed on the substrate and electrically connected to the substrate. The difference in the wavelength of the semiconductor light-emitting diode dice between the maximum dominant wavelength and the minimum dominant wavelength is at least 10 nm and the average dominant wavelength is between 450 nm and 470 nm. Therefore, by the above arrangement, it not only homogenizes the light emitted from the light-emitting device of the present invention, but also depletes the surplus stocks of the semiconductor light-emitting diode dice on the production line.

Claims

exact text as granted — not AI-modified
1 . A light-emitting device, comprising:
 a substrate; and   a plurality of semiconductor light-emitting diode dice having dominant wavelengths between 440 nm and 490 nm, said semiconductor light-emitting diode dice disposed on said substrate and electrically connected to said substrate, wherein a difference in wavelength of said semiconductor light-emitting diode dice between maximum dominant wavelength and minimum dominant wavelength is at least 10 nm.   
     
     
         2 . The light-emitting device of  claim 1 , further comprising a package structure covering said semiconductor light-emitting diode dice. 
     
     
         3 . The light-emitting device of  claim 2 , wherein said package structure comprises a phosphor layer and a package layer. 
     
     
         4 . The light-emitting device of  claim 3 , wherein said semiconductor light-emitting diode dice emit light to excite said phosphor layer to emit exciting light with wavelength between 520 nm and 660 nm. 
     
     
         5 . The light-emitting device of  claim 3 , wherein said phosphor layer comprises a transparent resin mixed with yellow phosphor. 
     
     
         6 . The light-emitting device of  claim 1 , wherein said semiconductor light-emitting diode dice have average dominant wavelength between 450 nm and 470 nm. 
     
     
         7 . The light-emitting device of  claim 1 , wherein said semiconductor light-emitting diode dice have average dominant wavelength between 453 nm and 460 nm. 
     
     
         8 . The light-emitting device of  claim 1 , wherein said semiconductor light-emitting diode dice are electrically connected in parallel. 
     
     
         9 . The light-emitting device of  claim 1 , wherein the total number of said semiconductor light-emitting diode dice is two to five. 
     
     
         10 . The light-emitting device of  claim 1 , further comprising a plurality of auxiliary semiconductor light-emitting diode dice having dominant wavelengths between 620 nm and 770 nm and between 490 nm and 580 nm, and said auxiliary semiconductor light-emitting diode dice being disposed on said substrate and electrically connected to said substrate.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.