Semiconductor device and method of producing semiconductor device

Abstract

A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

1 . A method of producing a semiconductor device comprising:
 forming a first wiring in a moisture-resistant frame-shaped region surrounding an element region;   forming, between the moisture-resistant frame-shaped region and an outer peripheral edge of a semiconductor device, a second wiring extending along the outer peripheral edge;   forming an insulating film over the first wiring and the second wiring; and   forming a groove in the insulating film between the outer peripheral edge and the moisture-resistant frame-shaped region.   
     
     
         2 . The method of producing a semiconductor device according to  claim 1 , wherein the forming a groove is performed by etching the insulating film located over the second wiring. 
     
     
         3 . The method of producing a semiconductor device according to  claim 1 , wherein the forming the first wiring and the forming the second wiring are performed at the same time. 
     
     
         4 . A method of producing a semiconductor device comprising:
 forming a first wiring in a first moisture-resistant frame region surrounding a first element region in a semiconductor substrate;   forming a second wiring in a second moisture-resistant frame region surrounding a second element region facing the first element region with a scribe region therebetween in the semiconductor substrate and that;   forming, between the first wiring and the scribe region, a third wiring extending along the scribe region;   forming, between the second wiring and the scribe region, a fourth wiring extending along the scribe region;   forming an insulating film over the first wiring, the second wiring, the third wiring, and the fourth wiring;   forming a first groove in the insulating film between the first wiring and the scribe region;   forming a second groove in the insulating film between the second wiring and the scribe region; and   cutting the semiconductor substrate and the insulating film along the scribe region.   
     
     
         5 . The method of producing a semiconductor device according to  claim 4 , further comprising:
 forming a first element on the semiconductor substrate in the scribe region, the step being performed before the step of cutting.   
     
     
         6 . The method of producing a semiconductor device according to  claim 4 , wherein the forming the first groove is performed by etching the insulating film located on the third wiring, and the forming the second groove is performed by etching the insulating film over the fourth wiring. 
     
     
         7 . The method of producing a semiconductor device according to  claim 4 , wherein the forming a first wiring, the forming a second wiring, the forming a third wiring, and the forming a fourth wiring are performed at the same time.