US2012222730A1PendingUtilityA1

Tandem solar cell with improved absorption material

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Assignee: GUNAWAN OKIPriority: Mar 1, 2011Filed: Mar 1, 2011Published: Sep 6, 2012
Est. expiryMar 1, 2031(~4.6 yrs left)· nominal 20-yr term from priority
Inventors:Oki GunawanJeehwan KimDavid B. MitziDevendra K. SadanaTeodor K. Todorov
C23C 14/34Y02E10/548H10F 71/10H10F 71/00H10F 10/172H10F 10/19H10F 77/128Y02E10/541
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Claims

Abstract

A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.

Claims

exact text as granted — not AI-modified
1 . A photosensitive device, comprising:
 a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween; and   a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween, the bottom intrinsic layer including a Cu—Zn—Sn containing chalcogenide.   
     
     
         2 . The device as recited in  claim 1 , wherein the Cu—Zn—Sn containing chalcogenide is a compound with a kesterite structure of the formula: Cu 2-x Zn 1+y Sn(S 1-z Se z ) 4+q  wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1. 
     
     
         3 . The device as recited in  claim 1 , wherein the bottom intrinsic layer includes a deposited ink material. 
     
     
         4 . The device as recited in  claim 1 , wherein the bottom cell includes a high-work-function metal as the P-type layer. 
     
     
         5 . The device as recited in  claim 4 , wherein the high-work-function metal includes molybdenum. 
     
     
         6 . The device as recited in  claim 5 , wherein the molybdenum is formed on a glass substrate. 
     
     
         7 . The device as recited in  claim 1 , wherein the bottom cell includes a layer of cadmium sulfide as the N-type layer. 
     
     
         8 . The device as recited in  claim 1 , wherein the top cell includes amorphous silicon as the top intrinsic layer. 
     
     
         9 . The device as recited in  claim 1 , wherein the top cell includes doped amorphous silicon as the N-type layer and includes doped microcrystalline silicon as the P-type layer. 
     
     
         10 . A photosensitive device, comprising:
 a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween; and   a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween, the bottom intrinsic layer including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu 2-x Zn 1+y Sn(S 1-z Se z ) 4+q  wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; =1≦q≦1, wherein z is controlled to adjust a band gap of the bottom cell to be lower than a band gap of the top cell.   
     
     
         11 . The device as recited in  claim 10 , wherein the top cell includes amorphous silicon as the top intrinsic layer. 
     
     
         12 . The device as recited in  claim 10 , wherein the top cell includes doped amorphous silicon as the N-type layer and includes doped microcrystalline silicon as the P-type layer. 
     
     
         13 . The device as recited in  claim 10 , wherein the bottom intrinsic layer includes a deposited ink material. 
     
     
         14 . The device as recited in  claim 10 , wherein the bottom cell includes a layer of cadmium sulfide as the N-type layer. 
     
     
         15 . A method for fabrication of a tandem photovoltaic device, comprising:
 forming a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween, wherein the bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide; and   forming a top cell over the bottom cell to form a tandem cell, the top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween.   
     
     
         16 . The method as recited in  claim 15 , wherein the Cu—Zn—Sn containing chalcogenide includes a kesterite structure of a formula: Cu 2-x Zn 1+y Sn(S 1-z Se z ) 4+q  wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1. 
     
     
         17 . The method as recited in  claim 16 , further comprising adjusting z to control a band gap of the bottom intrinsic layer such that the band gap of the bottom cell is lower than a band gap of the top cell. 
     
     
         18 . The method as recited in  claim 15 , wherein the bottom cell includes molybdenum as the P-type layer formed on a glass substrate. 
     
     
         19 . The method as recited in  claim 15 , wherein the bottom cell includes a layer of cadmium sulfide as the N-type layer. 
     
     
         20 . The method as recited in  claim 15 , wherein the top cell includes amorphous silicon as the top intrinsic layer. 
     
     
         21 . The method as recited in  claim 15 , wherein the top cell includes doped amorphous silicon as the N-type layer and includes doped microcrystalline silicon as the P-type layer. 
     
     
         22 . The method as recited in  claim 15 , wherein the bottom intrinsic layer is formed by a coating process. 
     
     
         23 . The method as recited in  claim 22 , wherein the coating process is performed in less than one minute. 
     
     
         24 . The method as recited in  claim 22 , wherein the coating process includes an ink deposition. 
     
     
         25 . The method as recited in  claim 22 , wherein the coating process includes one of sputtering, electroplating or spin-coating.

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