Semiconductor device including a crystal semiconductor layer, its fabrication and its operation

Abstract

In one embodiment, a method of fabricating a semiconductor device having a crystalline semiconductor layer includes preparing a semiconductor substrate and forming a preliminary active pattern on the semiconductor substrate. The preliminary active pattern includes a barrier pattern and a non-single crystal semiconductor pattern. A sacrificial non-single crystal semiconductor layer covers the preliminary active pattern and the semiconductor substrate. By crystallizing the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern, using the semiconductor substrate as a seed layer, the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern are changed to a sacrificial crystalline semiconductor layer and a crystalline semiconductor pattern, respectively. The crystalline semiconductor pattern and the barrier pattern constitute an active pattern. The sacrificial crystalline semiconductor layer is removed.

1 . A semiconductor device comprising,
 a semiconductor substrate having first source/drain regions;   an active pattern on the semiconductor substrate, the active pattern comprising a barrier pattern and a single crystalline semiconductor pattern on the barrier pattern; and   a gate pattern on the single crystalline semiconductor pattern.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein the single crystalline semiconductor pattern has second source/drain regions.   
     
     
         3 . The semiconductor device according to  claim 2 ,
 wherein the second source/drain regions are vertically aligned and disposed at both sides of the gate pattern.   
     
     
         4 . The semiconductor device according to  claim 1 ,
 wherein the first source/drain regions are vertically aligned and disposed at both sides of the gate pattern.   
     
     
         5 . The semiconductor device according to  claim 1 ,
 wherein the gate pattern comprises a gate insulating layer and a gate electrode on the gate insulating layer.   
     
     
         6 . The semiconductor device to  claim 1 ,
 wherein the gate pattern comprises a gate insulating layer and a gate electrode on the gate insulating layer.   
     
     
         7 . The semiconductor device according to  claim 1 ,
 wherein the semiconductor substrate and the single crystalline semiconductor pattern having the same single crystalline structures.