Method of manufacturing gallium nitride-based compound semiconductor light-emitting device, gallium nitride-based compound semiconductor light-emitting device, and lamp

Abstract

Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (VI) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film ( 15 ) including a dopant is laminated on a p-type semiconductor layer ( 14 ) of a gallium nitride-based compound semiconductor device ( 1 ). The transparent conductive oxide film 15 is subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film ( 15 ).

1 . A gallium nitride-based compound semiconductor light-emitting device, in which a transparent conductive oxide film including a dopant is laminated on a p-type semiconductor layer of a gallium nitride-based compound semiconductor device, wherein concentration of an element, which composes the p-type semiconductor layer, in the transparent conductive oxide film is 20 at % or below at a location within 2 nm from an interface between the transparent conductive oxide film and the p-type semiconductor layer. 
     
     
         2 . A gallium nitride-based compound semiconductor light-emitting device, in which a transparent conductive oxide film including a dopant is laminated on a p-type semiconductor layer of a gallium nitride-based compound semiconductor device, wherein concentration of an element, which composes the p-type semiconductor layer, in the transparent conductive oxide film is 20 at % or below at a location within 1 nm from an interface between the transparent conductive oxide film and the p-type semiconductor layer. 
     
     
         3 . The gallium nitride-based compound semiconductor light-emitting device according to  claim 1 , wherein the transparent conductive oxide film is made of at least one selected from the group consisting of ITO, AZO, IZO, GZO, a ZnO-based conductor, and a TiO 2 -based conductor. 
     
     
         4 . The gallium nitride-based compound semiconductor light-emitting device according to  claim 3 , wherein the transparent conductive oxide film includes at least ITO. 
     
     
         5 . The gallium nitride-based compound semiconductor light-emitting device according to  claim 1 , wherein thickness of the transparent conductive oxide film falls within a range of 35 nm to 10 μm. 
     
     
         6 . The gallium nitride-based compound semiconductor light-emitting device according to  claim 1 , wherein thickness of the transparent conductive oxide film falls within a range of 100 nm to 1 μm. 
     
     
         7 . The gallium nitride-based compound semiconductor light-emitting device according to  claim 2 , wherein the transparent conductive oxide film is made of at least one selected from the group consisting of ITO, AZO, IZO, GZO, a ZnO-based conductor, and a TiO 2 -based conductor. 
     
     
         8 . The gallium nitride-based compound semiconductor light-emitting device according to  claim 7 , wherein the transparent conductive oxide film includes at least ITO. 
     
     
         9 . The gallium nitride-based compound semiconductor light-emitting device according to  claim 2 , wherein thickness of the transparent conductive oxide film falls within a range of 35 nm to 10 μm. 
     
     
         10 . The gallium nitride-based compound semiconductor light-emitting device according to  claim 2 , wherein thickness of the transparent conductive oxide film falls within a range of 100 nm to 1 μm. 
     
     
         11 . A lamp comprising a gallium nitride-based compound semiconductor light-emitting device according to  claim 1 . 
     
     
         12 . A lamp comprising a gallium nitride-based compound semiconductor light-emitting device according to  claim 2 .