US2012234240A1PendingUtilityA1
Graphene synthesis chamber and method of synthesizing graphene by using the same
Est. expiryMar 17, 2031(~4.7 yrs left)· nominal 20-yr term from priority
C23C 16/26C23C 16/545B82Y 40/00C23C 16/46C23C 16/482C23C 14/541H01J 37/32724
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Claims
Abstract
A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.
Claims
exact text as granted — not AI-modified1 . A graphene synthesis chamber comprising:
a chamber case in which a substrate comprising a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.
2 . The graphene synthesis chamber of claim 1 , wherein the at least one auxiliary heating unit comprises:
a first auxiliary heating portion which faces a first surface of the substrate; and a second auxiliary heating portion which faces a second surface, opposite to the first surface, of the substrate.
3 . The graphene synthesis chamber of claim 2 , wherein the gas supply unit is disposed at a first side of an auxiliary space formed by the first auxiliary heating portion and the second auxiliary heating portion in the inner space, and
wherein the gas supply unit supplies the at least one gas into the auxiliary space.
4 . The graphene synthesis chamber of claim 3 , further comprising a gas discharge unit which is disposed at second side of the auxiliary space and discharges the at least one gas flowing through the auxiliary space to an outside.
5 . The graphene synthesis chamber of claim 1 , wherein the main heating unit comprises:
a halogen lamp; and a window which is disposed in a direction in which the halogen lamp emits the at least one light or surrounds an outer circumference of the halogen lamp.
6 . The graphene synthesis chamber of claim 1 , wherein the at least one light comprises a near-infrared wavelength band light, and at least one of a mid-infrared wavelength band light and a visible wavelength band light,
wherein the at least one gas further comprises at least one of an inert gas and a non-reactive gas which is heated by at least one of the three lights.
7 . The graphene synthesis chamber of claim 6 , wherein the carbon gas and the at least one of the inert gas and the non-reactive gas are supplied into the inner space at different times.
8 . The graphene synthesis chamber of claim 6 , wherein the main heating unit emits one of the three lights at a first time to heat the at least one of the inert gas and the non-reactive gas, the at least one auxiliary heating unit and the substrate, and emits at a second time, later than the first time, at least one of the other two lights to heat the carbon gas which is supplied into the inner space after the at least one of the inert gas and the non-reactive gas is supplied into the inner space.
9 . The graphene synthesis chamber of claim 8 , wherein the near-infrared wavelength band light is the one of the three lights emitted at the first time, and the mid-infrared wavelength band light and the visible wavelength band light are the other two lights emitted at the second time.
10 . The graphene synthesis chamber of claim 1 , wherein the main heating unit is disposed on at least one of a central region of the chamber case and a region adjacent to an inner surface of the chamber case,
wherein the at least one auxiliary heating unit is a plurality of auxiliary heating units disposed parallel to the inner surface of the chamber case.
11 . The graphene synthesis chamber of claim 1 , further comprising at least one barrier wall which divides the inner space of the chamber case into at least two spaces,
wherein the at least one gas further comprises at least one of an inert gas and a non-reactive gas which is heated by the at least one light, in a first space of the at least two spaces, and wherein the at least one auxiliary heating unit is disposed in a second space of the at least two spaces where the carbon gas is heated by the at least one light and the radiant heat.
12 . The graphene synthesis chamber of claim 11 , wherein the at least one light comprises a near-infrared wavelength band light, a mid-infrared wavelength band light and a visible wavelength band light,
wherein the at least one of the inert gas and the non-reactive gas is heated by at least one of the three lights, and wherein the carbon gas is heated by at least one of the three lights and the radiant heat to form graphene on the substrate.
13 . The graphene synthesis chamber of claim 1 , wherein the chamber case further comprises:
a metal thin film inlet/outlet through which the substrate is introduced into the chamber case, and the substrate on which graphene is formed is output from the chamber case, wherein the metal thin film inlet/outlet comprises at least one gap which closes in a vacuum state of the inner space of the chamber case, and opens when the substrate on which the graphene is formed passes through the chamber case.
14 . The graphene synthesis chamber of claim 13 , wherein a first gap among the at least one gap is disposed at a side where the substrate is introduced into the chamber case, and
wherein the first gap is substantially equal to a thickness of the substrate before the graphene is formed thereon.
15 . The graphene synthesis chamber of claim 14 , wherein a second gap among the at least one gap is disposed at a side where the substrate on which the graphene is formed is output from the chamber case, and
wherein the second gap is substantially equal to a sum of thicknesses of the graphene and the substrate.
16 . The graphene synthesis chamber of claim 13 , wherein the metal thin film inlet/outlet comprises rotating members which roll the substrate into the chamber, and
wherein the rotating members linearly contact the substrate when the substrate moves in the at least one gap.
17 . The graphene synthesis chamber of claim 13 , wherein surfaces of the rotating members contacting the metal thin film of the substrate comprise a material having a hardness less than a hardness of the metal thin film.
18 . The graphene synthesis chamber of claim 13 , further comprising loadlock chambers which are disposed outside the chamber case with the at least one gap between the loadlock chambers and the chamber case,
wherein the loadlock chambers comprise a supplier/receiver which supplies the substrate into the chamber through the metal thin film inlet/outlet, and receives the substrate on which the graphene is formed through the metal thin film inlet/outlet, and wherein the load lock chambers are closed from an outside.
19 . The graphene synthesis chamber of claim 1 , further comprising metal thin film protecting unit which is disposed in the chamber case and protects at least a portion of the substrate from the at least one gas,
wherein the at least the portion of the substrate is wound around a roller, and wherein the at least one metal thin film protecting unit comprises a material which evaporates at a temperature higher than a temperature at which graphene is formed on the substrate.
20 . The graphene synthesis chamber of claim 1 , further comprising a gas discharge unit which discharges the at least one gas to an outside after graphene is formed on the substrate at least by the radiant heat,
wherein the gas discharge unit discharges a gas existing in the inner space to an outside to depressurize the inner space before the at least one gas is supplied into the inner space.Cited by (0)
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