Liquid-crystalline mixtures
Abstract
The present invention describes liquid-crystalline mixtures, and also oligomers or polymers which are obtainable by oligomerizing or polymerizing the inventive liquid-crystalline mixtures, a process for printing or coating substrates by applying and then polymerizing the inventive liquid-crystalline mixtures and the use of the inventive liquid-crystalline mixtures or of the inventive oligomers or polymers for production of optical or electrooptical components. The present invention further relates to the use of the inventive liquid-crystalline mixtures which comprise at least one chiral dopant for production of thermal insulation layers, and to such thermal insulation layers.
Claims
exact text as granted — not AI-modified1 . A liquid-crystalline mixture, comprising:
(A) a compound of formula I:
(B) a compound of formula II:
(C) at least one compound selected from the group consisting of a photoinitiator, a reactive diluent comprising a photopolymerizable group, a diluent, a defoamer, a deaerator, a lubricant, a leveling agent, a thermally curing auxiliary, a radiatively curing auxiliary, a substrate wetting aids, a wetting aid, a dispersing aid, a hydrophobizing agent, an adhesion promoter, a scratch resistance auxiliary, and a chiral dopant, and
(D) optionally at least one substance selected from the group consisting of a dye and a pigment,
wherein Z 1 , Z 2 , Z 3 , and Z 4 are each independently
A 1 , A 2 , A 3 , and A 4 are each independently a spacer having 4 to 8 carbon atoms,
Y 1 , Y 2 , Y 3 , and Y 4 are each independently a single chemical bond, oxygen, —CO—, —O—CO—, or —CO—O—,
R 1 and R 2 are each independently hydrogen, C 1 -C 6 -alkyl, or CO—O—C 1 -C 6 -alkyl,
a proportion of component A is from 22.5 mol % to 32.5 mol % and a proportion of component B is from 67.5 mol % to 77.5 mol %, based on a total molar amount of A and B, and
the proportions of components A and B add up to 100 mol %
2 . The liquid-crystalline mixture of claim 1 ,
wherein Z 1 -Y 1 , Y 2 -Z 2 , Z 3 -Y 3 , and Y 4 -Z 4 are each independently:
3 . An oligomer or polymer, obtained by a process comprising:
oligomerizing or polymerizing the mixture of claim 1 .
4 . A process for printing or coating a substrate, the process comprising:
applying the mixture of claim 1 to the substrate, and then polymerizing the mixture.
5 . A process for producing an optical or electrooptical component, comprising:
producing an optical or electrooptical component with the mixture of claim 1 .
6 . A process for producing a thermal insulation layer, the process comprising:
producing the layer with the mixture of claim 1 , wherein the layer comprises a cholesteric layer capable of reflecting at least 40% of infrared incident radiation, and component (C) comprises a chiral dopant.
7 . A process for producing a thermal insulation layer, the process comprising:
producing the layer with the mixture of claim 1 , wherein the layer comprises a cholesteric layer with a transmission of at least 80% of incident radiation of wavelength of from 390 nm to 750 nm.
8 . A thermal insulation layer, comprising:
a cholesteric layer, capable of reflecting at least 40% of infrared incident radiation, wherein the cholesteric layer is obtained by a process comprising producing the cholesteric layer with the mixture of claim 1 , and component (C) comprises a chiral dopant.
9 . A thermal insulation layer, comprising:
a cholesteric layer with a transmission of at least 80% of incident radiation of wavelength of from 390 nm to 750 nm, wherein the cholesteric layer is obtained by a process comprising producing the layer with the mixture of claim 1 , and wherein component (C) comprises a chiral dopant.
10 . The process of claim 6 , wherein the cholesteric layer is capable of reflecting at least 45% of infrared incident radiation.
11 . The process of claim 6 , wherein the cholesteric layer is capable of reflecting at least 40% of incident radiation with wavelength of from 750 to 2000 nm.
12 . The process of claim 6 , wherein the cholesteric layer is capable of reflecting at least 45% of incident radiation with wavelength of from 750 to 2000 nm.
13 . The process of claim 7 , wherein the cholesteric layer has a transmission of at least 90% of incident radiation with wavelength of from 390 nm to 750 nm.
14 . The thermal insulation layer of claim 8 , wherein the cholesteric layer is capable of reflecting at least 45% of infrared incident radiation.
15 . The thermal insulation layer of claim 8 , wherein the cholesteric layer is capable of reflecting at least 40% of incident radiation with wavelength of from 750 to 2000 nm.
16 . The thermal insulation layer of claim 8 , wherein the cholesteric layer is capable of reflecting at least 45% of incident radiation with wavelength of from 750 to 2000 nm.
17 . The thermal insulation layer of claim 9 , wherein the cholesteric layer has a transmission of at least 90% of incident radiation with wavelength of from 390 nm to 750 nm.Cited by (0)
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