Nano/micro-sized diode and method of preparing the same

Abstract

A nano/micro-sized diode and a method of preparing the same, the diode including: a first electrode; a second electrode; and a diode layer that is disposed between the first electrode and the second electrode. The diode layer includes a first layer and a second layer. The first layer is disposed on the first electrode and has a first surface that is electrically connected to the first electrode, and an opposing second surface that has a protrusion. The second layer is disposed between the first layer and the second electrode and has a first surface having a recess that corresponds to the protrusion, and an opposing second surface that is electrically connected to the second electrode.

1 . A nano/micro-sized diode comprising:
 a first electrode;   a second electrode; and   a diode layer disposed between the first electrode and the second electrode, the diode layer comprising,
 a first layer disposed on the first electrode, having a first surface that is electrically connected to the first electrode, and an opposing second surface having a protrusion, and 
 a second layer disposed between the first layer and the second electrode, having a first surface having a recess corresponding to the protrusion, and an opposing second surface that is electrically connected to the second electrode, 
 wherein the first surface of the second layer entirely covers the second surface of the first layer. 
   
     
     
         2 . A method of preparing a nano/micro-sized diode, comprising:
 forming first electrodes in holes of a porous template;   applying material layers onto the first electrodes;   heat treating the material layers, to form first layers that each has a first surface that is electrically connected to the first electrode, and an opposing second surface that has a protrusion;   forming second layers on the first layers, the second layers each having a first surface having a recess that corresponds to a respective one of the protrusions;   forming second electrodes on the second layers; and   removing the porous template, to obtain nano/micro-sized diodes.   
     
     
         3 . The method of  claim 2 , further comprising forming a control layer on the second layer. 
     
     
         4 . The method of  claim 2 , wherein the heat treating of the material layers is performed at a temperature of from 25° C. to 150° C. 
     
     
         5 . The method of  claim 2 , wherein the heat treating of the material layers is performed for from 1 to 24 hours. 
     
     
         6 . The method of  claim 2 , further comprising expanding spaces between the protrusions and the walls of the holes. 
     
     
         7 . The method of  claim 2 , wherein the porous template is selected from the group consisting of: an anodic aluminum oxide membrane; a polycarbonate template; an anodic titania membrane; and a porous membrane comprising polypropylene, nylon, polyester, or block copolymers thereof. 
     
     
         8 . The method of  claim 2 , wherein the removing of the porous template comprises wet etching, dry etching, or pyrolysis.