Interconnecting structure production method, and interconnecting structure

Abstract

An interconnecting structure production method includes providing a substrate, forming a semiconductor layer on the substrate, forming a doped semiconductor layer on the semiconductor layer, the doped semiconductor layer containing a dopant, forming an oxide layer in a surface of the doped semiconductor layer by heating the surface of the doped semiconductor layer in atmosphere of an oxidizing gas with a water molecule contained therein, forming an alloy layer on the oxide layer, and forming an interconnecting layer on the alloy layer.

1 . An interconnecting structure, comprising:
 a substrate;   a semiconductor layer formed on the substrate;   a doped semiconductor layer formed on the semiconductor layer, the doped semiconductor layer containing a dopant;   an oxide layer formed in a surface of the doped semiconductor layer;   an alloy layer formed on the oxide layer;   a diffusion barrier layer provided between the oxide layer and the alloy layer, the diffusion barrier layer comprising an additive element concentration higher than an additive element concentration of the alloy layer; and   an interconnecting layer formed on the alloy layer.   
     
     
         2 . The interconnecting structure according to  claim 1 , wherein
 the semiconductor layer comprises an amorphous silicon layer,   the doped semiconductor layer comprises a silicon layer containing the dopant,   the oxide layer comprises a silicon oxide layer formed by oxidizing a surface of the doped silicon layer,   the alloy layer comprises a Cu alloy layer containing Cu and an additive element, and   the interconnecting layer comprises a Cu layer.