Optical interconnection module and optical-electrical hybrid board

Abstract

There are provided an optical interconnection module and an optical-electrical hybrid board using the same to process optical and electric signals on a board at a low transmission loss at high speed in transmitting high-speed optical signals sent and received between chips or between boards in a data processing apparatus. An optical interconnection module has a structure in which an optical signal is emitted from a laser optical source device, propagates the inside of a modulator device, and is deflected by a beam turning structure in the vertical direction of a substrate, an optical signal is incident from the outside of a semiconductor substrate, and transmitted and received at a photo diode provided on the semiconductor substrate, and the optical signals are optically connected to each other through the inside of the semiconductor substrate in the vertical direction of the substrate with the outside of the semiconductor substrate.

1 . An optical interconnection module comprising:
 an optical source device mounted on a semiconductor substrate and configured to emit light;   a modulator device including:
 a waveguide integrated on the semiconductor substrate and configured to guide the light in a horizontal direction with respect to a front surface of the semiconductor substrate; and 
 a beam turning part configured to tune a course of the light passing through the waveguide in a direction different from the horizontal direction; 
   a photo diode configured to receive light incident from an outside of the semiconductor substrate; and   a driver IC configured to drive diodes including the photo diode,   wherein the light having passed through the beam turning part enters one main surface of the semiconductor substrate, passes through the semiconductor substrate, and is emitted from the other main surface opposite the one surface to the outside of the semiconductor substrate.   
     
     
         2 . The optical interconnection module according to  claim 1 , wherein:
 the semiconductor substrate is formed of a silicon material;   the optical source device is a laser optical source device formed on a compound semiconductor; and   a wavelength of light oscillated from the optical source device is 1 μm or more.   
     
     
         3 . The optical interconnection module according to  claim 1 , further comprising:
 a first structure provided in a region including a position at which a direction, in which the light having passed through the beam turning part and beam-turned travels, crosses the other main surface of the semiconductor substrate, the first structure having a lens function; and   a second structure provided in a region including a position at which a direction, in which light coming from the outside of the semiconductor substrate and entering the photo diode travels, cross the other main surface of the semiconductor substrate, the second structure having a lens function.   
     
     
         4 . The optical interconnection module according to  claim 1 ,
 wherein the beam turning part has a structure in which one end of the waveguide is tapered at an angle ranging from 35 to 55 degrees.   
     
     
         5 . The optical interconnection module according to  claim 1 ,
 wherein the photo diode uses a germanium material for a receiver.   
     
     
         6 . The optical interconnection module according to  claim 2 ,
 wherein the driver IC includes:   a driver circuit configured to drive the modulator device; and   a transimpedance amplifier configured to amplify an output electric signal from the photo diode.   
     
     
         7 . The optical interconnection module according to  claim 6 , wherein:
 the laser optical source device, the modulator device, the photo diode, and the driver IC are disposed on the semiconductor substrate so that the laser optical source device, the modulator device, the photo diode, and the driver IC form an array of two channels or more;   a modulator device array formed of the modulator devices and a photo diode array formed of the photo diodes are disposed so as to be faced to each other on the semiconductor substrate; and   the driver circuit to drive the modulator device and the transimpedance amplifier are disposed between the modulator device array and the photo diode array.   
     
     
         8 . The optical interconnection module according to  claim 6 , wherein:
 the modulator device, the photo diode, and the driver IC are disposed on the semiconductor substrate so that the modulator device, the photo diode, and the driver IC form an array of two channels or more;   each one of the laser optical source devices is provided with an array of N of the modulator devices (N≧2); and   light emitted from the laser optical source device is optically connected through an optical waveguide having a branch structure in which the light emitted from the laser optical source device is branched into 1:N (N is a natural number of two or more).   
     
     
         9 . An optical-electrical hybrid board having the optical interconnection module according to  claim 2  mounted thereon, the optical-electrical hybrid board comprising:
 an optical wiring board including:
 a clad layer provided on a substrate; 
 a waveguide core covered by a material having a refractive index higher than a refractive index of the clad layer; and 
 an optical waveguide having a beam turning mirror structure at an end portion of the waveguide core, wherein: 
 
 the optical interconnection module is mounted on the optical wiring board; and 
 signals transmitted and received between a laser device and an external modulator provided on the optical interconnection module and the optical waveguide, or between the optical waveguide and a photo diode are optically connected through a silicon substrate in a vertical direction of the substrate. 
 
     
     
         10 . The optical-electrical hybrid board according to  claim 9 ,
 wherein the optical waveguide is formed of a polymer material.   
     
     
         11 . The optical-electrical hybrid board according to  claim 9 ,
 wherein in the optical wiring board having at least two layers or more of the optical waveguides and optically connected to the optical interconnection module,   a first optical waveguide optically connected to the modulator device and a second optical waveguide optically connected to the photo diode are formed in different layers.   
     
     
         12 . The optical-electrical hybrid board according to  claim 9 , wherein:
 an interposer substrate having an electric via hole is provided on the optical interconnection module;   an LSI circuit is placed on the interposer substrate; and   the LSI circuit is electrically connected to the modulator device, the photo diode, or the drive circuit integrated on the optical interconnection module through the interposer substrate.   
     
     
         13 . The optical-electrical hybrid board according to  claim 12 ,
 wherein the interposer substrate is formed of ceramics or a semiconductor material.   
     
     
         14 . The optical-electrical hybrid board according to  claim 12 , wherein:
 a direction of leading out a first electric wiring to supply a bias to the laser optical source device integrated on the optical interconnection module and a direction of leading out a second electric wiring to drive the modulator device are provided in directions different from each other; and   the first electric wiring is electrically connected to the optical wiring board through the interposer substrate.