US2012252223A1PendingUtilityA1
Method of manufacturing a semiconductor device
Est. expiryFeb 25, 2030(~3.6 yrs left)· nominal 20-yr term from priority
Inventors:Kazuo Kobayashi
H10P 72/0436H10P 14/6308H10D 64/01366H10D 62/8325H10D 84/035H10D 64/685H10D 12/031H10D 30/66H10P 14/6334H10P 14/69215H10P 14/6905
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Claims
Abstract
A method of manufacturing a semiconductor device according to the present invention includes the steps of: (a) introducing hydrogen and oxygen on a SiC substrate; and (b) subjecting the hydrogen and the oxygen to a combustion reaction on the SiC substrate to form a gate oxide film being a silicon oxide film on a surface of the SiC substrate by the combustion reaction.
Claims
exact text as granted — not AI-modified1 . A method of manufacturing a semiconductor device, comprising the steps of: (a) introducing hydrogen and oxygen on a SiC substrate; (b) subjecting said hydrogen and said oxygen to a combustion reaction on said SiC substrate to form a silicon oxide film on a surface of said SiC substrate by said combustion reaction; and (c) dry-oxidizing said surface of said SiC substrate to separately form another silicon oxide film, wherein the silicon oxide film formed step (b) is in direct contact with the another silicon oxide film formed in step (c), and wherein said step (b) is performed after said step (c).
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