Method for producing a thin film transistor and a device of the same

Abstract

A method for producing a thin film transistor and including the following steps for preparing a glass substrate; having a positive photosensitive coating on the glass substrate; providing a transparent mold plate, having a plurality of ladder opaque protrusions in accordance with a predetermined pattern having different depth; controlling the transparent mold plate downwardly to press into the positive photosensitive coating and non-contacting to the glass substrate; exposing a part of the positive photosensitive coating via an explosion by a UV light; remaining the other part of the positive photosensitive coating, which is shielded by the protrusions and shaped corresponding to the predetermined pattern; separating the transparent mold plate from the glass substrate, and removing the other parts of the photosensitive coating unshielded via a chemical solvent. Thereby, after the positive photosensitive coating is pressed, cured, and cleaned the thin film transistor is formed.

1 . A thin film transistor comprising:
 a glass substrate having a positive photosensitive coating formed thereon, and a part of the positive photosensitive coating being exposed; and   a transparent mold plate including a plurality of ladder opaque protrusions disposed thereon, and the ladder opaque protrusions being arranged relevant to a predetermined pattern having different depth;   wherein the other part of the positive photosensitive coating shielded under the ladder opaque protrusions is remained while the part of the positive photosensitive coating unshielded by the ladder opaque protrusions is removed via a chemical solvent;   whereby the thin film transistor is formed, after the positive photosensitive coating is pressed, cured, and cleaned.   
     
     
         2 . The thin film transistor as claimed in  claim 1 , wherein the positive photosensitive coating is made of semiconductor, conductive or insulating materials in a selective manner. 
     
     
         3 . The thin film transistor as claimed in  claim 1 , wherein the transparent mold plate is made of glass materials or quartz; the ladder opaque protrusions are made of metallic materials. 
     
     
         4 . The thin film transistor as claimed in  claim 3 , further including an adhesion layer formed between the transparent mold plate and the ladder opaque protrusions; wherein the adhesion layer has a coefficient of thermal expansion ranging between those of the transparent mold plate and the ladder opaque protrusions. 
     
     
         5 . The thin film transistor as claimed in  claim 4 , wherein the adhesion layer is made of a metallic oxide that is made from a predetermined metal. 
     
     
         6 . The thin film transistor as claimed in  claim 5 , wherein the predetermined metal is a transition metal, such as Cr, Mo or W; and the metallic oxide is a transition-metal oxide corresponding to the predetermined metal. 
     
     
         7 . The thin film transistor as claimed in  claim 1 , further including a dewetting layer, which is de-wetted from the positive photosensitive coating, arranged onto the metallic material. 
     
     
         8 . The thin film transistor as claimed in  claim 7 , wherein the dewetting layer is made from Teflon. 
     
     
         9 . A thin film transistor comprising: a glass substrate having a positive photosensitive coating formed thereon, and a part of the positive photosensitive coating being exposed via a UV light; a transparent mold plate including a plurality of ladder opaque protrusions disposed thereon, and the ladder opaque protrusions being arranged relevant to a predetermined pattern having different depth; and an adhesion layer formed between the transparent mold plate and the ladder opaque protrusions; and the adhesion layer having a coefficient of thermal expansion ranging between those of the transparent mold plate and the ladder opaque protrusions; wherein the other part of the positive photosensitive coating shielded under the ladder opaque protrusions is remained while the part of the positive photosensitive coating unshielded by the ladder opaque protrusions is removed via a chemical solvent; whereby the thin film transistor is formed a pattern having different depth, after the positive photosensitive coating is pressed, cured, and cleaned. 
     
     
         10 . The thin film transistor as claimed in  claim 9 , wherein the positive photosensitive coating is made of is semiconductor, conductive or insulating materials. 
     
     
         11 . The thin film transistor as claimed in  claim 9 , wherein the transparent mold plate is made of the glass materials or quartz; the ladder opaque protrusions are made of metallic materials. 
     
     
         12 . The thin film transistor as claimed in  claim 11 , wherein the adhesion layer is made of a metallic oxide that is made from a predetermined metal. 
     
     
         13 . The thin film transistor as claimed in  claim 12 , wherein the predetermined metal is a transition metal, such as Cr, Mo or W; and the metallic oxide is a transition-metal oxide corresponding to the predetermined metal. 
     
     
         14 . The thin film transistor as claimed in  claim 12 , further including a dewetting layer, which is de-wetted from the positive photosensitive coating, arranged onto the metallic materials. 
     
     
         15 . The thin film transistor as claimed in  claim 14 , wherein the dewetting layer is made from Teflon.