Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device includes a first conductive type semiconductor substrate; a first conductive type semiconductor region provided thereon in which first conductive type first pillar regions and second conductive type second pillar regions alternately arranged; second conductive type second semiconductor regions provided on second pillar regions in an element region to be in contact with first pillar regions therein; gate electrodes each provided on adjacent second semiconductor regions and on one of the first pillar region interposed therebetween; third semiconductor regions functioning as a first conductive type source region provided in parts of the second semiconductor regions located under side portions of the gate electrodes; and a second conductive type resurf region which is a part of a terminal region surrounding the element region and which is provided on first pillar regions and second pillar regions in the part of the terminal regions.

1 . A semiconductor device comprising:
 a first conductivity type semiconductor substrate;   a first semiconductor region provided over an upper surface of the semiconductor substrate and including an element region and a terminal region, the first semiconductor region having adjacent first and second regions, the first region being of the first conductivity type, the second region being of the second conductivity type, the adjacent first and second regions being on opposite sides of a line dividing the element and terminal regions, the first region being in the terminal region, the second region being in the element region; and   a third region of the second conductive type and which is within the terminal region but near the element region and which is provided over the adjacent first region,   wherein,
 the first region has a first width a first direction parallel to the upper surface of the semiconductor substrate, 
 the second region has a second width in the first direction, and 
 the first width is greater than the second width. 
   
     
     
         2 . The semiconductor device of  claim 1 , comprising a plurality of first and second regions that are alternately arranged in the first direction, wherein each first and each second region has one side parallel in a second direction to an upper surface of the semiconductor substrate which is orthogonal to the first direction. 
     
     
         3 . The semiconductor device of  claim 1 , comprising a fourth region of the second conductivity type which is over a surface of the adjacent second region and in which a semiconductor element can be formed, the fourth region being in contact with the adjacent first region. 
     
     
         4 . The semiconductor device of  claim 1 , comprising:
 a plurality of first and second regions alternately arranged in the first direction;   gate electrodes, each provided between second regions in the element region and over a respective first region in the element region with a gate insulating film between the gate electrode and the respective first region;   fourth regions of the second conductivity type each which is formed over a surface of a respective second region and in which a semiconductor element can be formed; and   respective source regions of the first conductivity type in the fourth regions.   
     
     
         5 . The semiconductor device of  claim 1 , comprising;
 a plurality of first and second regions in the element region that are alternately arranged in the first direction;   fourth regions of the second conductivity type each which is formed over a surface of a respective second region and in which a semiconductor element can be formed; and   respective source regions of the first conductivity type in the fourth regions.   
     
     
         6 . The semiconductor device of  claim 1 , comprising a plurality of first and second regions in the terminal region that are alternately arranged in the first direction,
 wherein,
 widths in the first direction of first regions connected to the third region are larger than widths in the first direction of first regions not connected to the third region. 
   
     
     
         7 . The semiconductor device of  claim 1 , wherein the first conductivity type is n-type and the second conductivity type is p-type. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the third region is a resuf region. 
     
     
         9 . The semiconductor device of  claim 1 , comprising a plurality of first and second regions in the terminal region that are alternately arranged in the first direction, wherein the third region overlies two first regions between which is positioned the adjacent second region. 
     
     
         10 . The semiconductor device of  claim 3 , wherein the third region is in contact with the fourth region.