Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method

Abstract

A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.

1 . A thin film transistor comprising:
 a gate electrode over a substrate;   a gate insulating layer;   an insulating layer made of a metal oxide on the gate insulating layer;   a channel layer over the gate insulating layer; and   source and drain electrodes on the channel layer.   
     
     
         2 . The thin film transistor according to  claim 1 , wherein the gate insulating layer and the insulating layer are disposed as a laminate structure. 
     
     
         3 . The thin film transistor according to  claim 1 , wherein the channel layer ( 19   a ) is crystallized by irradiating an energy beam. 
     
     
         4 . The thin film transistor according to  claim 1 , wherein the gate insulating layer and the channel layer are both crystallized. 
     
     
         5 . The thin film transistor according to  claim 1 , wherein the gate insulating layer ( 13 ) and the channel layer are both crystallized simultaneously. 
     
     
         6 . The thin film transistor according to  claim 1 , wherein the metal oxide includes one or two of Zr, Hf, Ta, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb, Lu, Dr, Al, Ti, Nb, W or Bi. 
     
     
         7 . The thin film transistor according to  claim 1 , wherein the metal oxide includes one of PbTiO3, (Pb,La)(Zr,Ti)O3 (PLZT), SrBiTaO9 (SBT), SrTiO3 (STO), (Ba,Sr)TiO3 (BSTO) or TiOx. 
     
     
         8 . The thin film transistor according to  claim 1 , wherein
 the gate insulating layer ( 13 ) is one of SiOx, SiNx or SiONx.   
     
     
         9 . The thin film transistor according to  claim 6 , wherein the gate insulating layer is one of SiOx, SiNx or SiONx. 
     
     
         10 . A display comprising:
 a thin film transistor; and   a display portion to be driven by a driving signal through the thin film transistor,   wherein the thin film transistor comprises
 a gate electrode over a substrate, 
 a gate insulating layer, 
 an insulating layer made of a metal oxide on the gate insulating layer, 
 a channel layer ( 19   a ) over the gate insulating layer, and 
 source and drain electrodes on the channel layer. 
   
     
     
         11 . The thin film transistor according to  claim 10 , wherein the gate insulating layer and the insulating layer are disposed as a laminate structure. 
     
     
         12 . The thin film transistor according to  claim 10 , wherein the channel layer is crystallized by an energy beam. 
     
     
         13 . The thin film transistor according to  claim 10 , wherein the gate insulating layer and the channel layer are both crystallized. 
     
     
         14 . The thin film transistor according to  claim 10 , wherein the gate insulating layer and the channel layer are both crystallized simultaneously. 
     
     
         15 . The thin film transistor according to  claim 10 , wherein the metal oxide includes one or two of Zr, Hf, Ta, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb, Lu, Dr, Al, Ti, Nb, W or Bi. 
     
     
         16 . The thin film transistor according to  claim 10 , wherein the metal oxide includes one of PbTiO3, (Pb,La)(Zr,Ti)O3 (PLZT), SrBiTaO9 (SBT), SrTiO3 (STO), (Ba,Sr)TiO3 (BSTO) or TiOx. 
     
     
         17 . The thin film transistor according to  claim 10 , wherein the gate insulating layer is one of SiOx, SiNx or SiONx. 
     
     
         18 . The thin film transistor according to  claim 15 , wherein the gate insulating layer is one of SiOx, SiNx or SiONx.