Memory Module, Memory System, and Inforamtion Device

Abstract

A memory system including ROM and RAM in which reading and writing are enabled. A memory system includes a non-volatile memory (FLASH), DRAM, a control circuit, and an information processing device. Data in FLASH is transferred to SRAM or DRAM in advance. Data transfer between the non-volatile memory and the DRAM can be performed in the background. The memory system including these plural chips is configured as a memory system module in which each chip is mutually laminated and each chip is wired via a ball grid array (BGA) and bonding wire between the chips. Data in FLASH can be read at the similar speed to that of DRAM by securing a region in which the data in FLASH can be copied in DRAM and transferring the data to DRAM in advance immediately after power is turned on or by a load instruction.

1 - 78 . (canceled) 
     
     
         79 . A mobile telephone comprising:
 an antenna;   a wireless block coupled to the antenna;   a base-band block coupled to the wireless block;   a voice codec block coupled to the base-band block;   a speaker coupled to the voice codec block;   a microphone coupled to the voice codec block;   a display block coupled to the base-band block; and   a memory system including a memory module having a non-volatile memory, a dynamic random access memory, a static random access memory, and a first control circuit that accesses the non-volatile memory, the dynamic random access memory, and the static random access memory,   wherein the memory module comprises a dynamic random access memory interface for accessing, from a device outside the memory module, the dynamic random access memory and the static random access memory, and   wherein the dynamic random access memory includes plural interfaces for accessing plural memories.   
     
     
         80 . The mobile telephone according to  claim 79 , wherein the plural interfaces are for accessing at least two types of different memories. 
     
     
         81 . The mobile telephone according to  claim 80 , wherein, immediately after power is turned on, data in a predetermined address region of the non-volatile memory is transferred to the static random access memory. 
     
     
         82 . The mobile telephone according to  claim 80 , wherein, immediately after power is turned on, data in a predetermined address region of the non-volatile memory is transferred to the dynamic random access memory. 
     
     
         83 . The mobile telephone according to  claim 80 , wherein data transfer between the non-volatile memory and the dynamic random access memory or the static random access memory is performed based on an instruction sent via the dynamic random access memory interface. 
     
     
         84 . The mobile telephone according to  claim 80 , wherein, in transferring data from the non-volatile memory to the static random access memory or the dynamic random access memory, data acquired by correcting an error is transferred. 
     
     
         85 . The mobile telephone according to  claim 80 , wherein, in transferring data from the static random access memory or the dynamic random access memory to the non-volatile memory, an address replacement process is executed. 
     
     
         86 . The mobile telephone according to  claim 80 , wherein a boot program is held in the non-volatile memory. 
     
     
         87 . The mobile telephone according to  claim 80 , wherein data transfer range data, which includes a range of data transferred from the non-volatile memory to the dynamic random access memory at initial time when operating power is turned on, is held in the non-volatile memory. 
     
     
         88 . The mobile telephone according to  claim 80 ,
 wherein the non-volatile memory and the dynamic random access memory are similar in memory size, and   wherein the static random access memory has a memory size equal to or smaller than 1/1000 of the memory size of the non-volatile memory.   
     
     
         89 . The mobile telephone according to  claim 82 , wherein data transfer range data, which includes a range of a predetermined address region of the non-volatile memory, is held in the non-volatile memory. 
     
     
         90 . The mobile telephone according to  claim 80 , wherein a data-hold operation of the dynamic random access memory is executed inside the memory module. 
     
     
         91 . The mobile telephone according to  claim 90 , wherein, when the data-hold operation is provided to the dynamic random access memory from the device, the data-hold operation of the dynamic random access memory inside the memory module is stopped. 
     
     
         92 . The mobile telephone according to  claim 80 , wherein:
 the device accesses the memory module first;   the dynamic random access memory performs a data-hold operation second; and   the memory module performs data transfer between the non-volatile memory and the static random access memory or the dynamic random access memory third.   
     
     
         93 . The mobile telephone according to  claim 80 ,
 wherein the dynamic random access memory is synchronous, and   wherein access to the non-volatile memory and the dynamic random access memory from the device is made via the dynamic random memory access interface.   
     
     
         94 . The mobile telephone according to  claim 80 ,
 wherein the non-volatile memory is a NAND flash memory, and   wherein the dynamic random access memory is synchronous.   
     
     
         95 . The mobile telephone according to  claim 80 ,
 wherein the non-volatile memory is an AND flash memory, and   wherein the dynamic random access memory is synchronous.   
     
     
         96 . The mobile telephone according to  claim 80 , wherein the non-volatile memory performs error detection, error correction, and address replacement. 
     
     
         97 . The mobile telephone according to  claim 96 , wherein a memory array of the non-volatile memory is configured according to NAND configuration. 
     
     
         98 . The mobile telephone according to  claim 96 , wherein a memory array of the non-volatile memory is configured according to AND configuration. 
     
     
         99 . The mobile telephone according to  claim 80 , wherein the dynamic random access memory includes a second control circuit which processes access from the device and a third control circuit that independently accesses the non-volatile memory. 
     
     
         100 . The mobile telephone according to  claim 80 , wherein the dynamic random access memory includes a second control circuit that independently accesses the non-volatile memory and a circuit to subordinately process access to the non-volatile memory by the second control circuit. 
     
     
         101 . The mobile telephone according to  claim 79 , wherein the plural interfaces are for accessing the dynamic random access memory and the non-volatile memory. 
     
     
         102 . The mobile telephone according to  claim 101 , wherein, immediately after power is turned on, data in a predetermined address region of the non-volatile memory is transferred to the static random access memory. 
     
     
         103 . The mobile telephone according to  claim 101 , wherein, immediately after power is turned on, data in a predetermined address region of the non-volatile memory is transferred to the dynamic random access memory. 
     
     
         104 . The mobile telephone according to  claim 101 , wherein data transfer between the non-volatile memory and the dynamic random access memory or the static random access memory is performed based on an instruction sent via the dynamic random access memory interface. 
     
     
         105 . The mobile telephone according to  claim 101 , wherein, in transferring data from the non-volatile memory to the static random access memory or the dynamic random access memory, data acquired by correcting an error is transferred. 
     
     
         106 . The mobile telephone according to  claim 101 , wherein, in transferring data from the static random access memory or the dynamic random access memory to the non-volatile memory, an address replacement process is executed. 
     
     
         107 . The mobile telephone according to  claim 101 , wherein a boot program is held in the non-volatile memory. 
     
     
         108 . The mobile telephone according to  claim 101 , wherein data transfer range data, which includes a range of data transferred from the non-volatile memory to the dynamic random access memory at initial time when operating power is turned on, is held in the non-volatile memory. 
     
     
         109 . The mobile telephone according to  claim 101 ,
 wherein the non-volatile memory and the dynamic random access memory are similar in memory size, and   wherein the static random access memory has a memory size equal to or smaller than 1/1000 of the memory size of the non-volatile memory.   
     
     
         110 . The mobile telephone according to  claim 103 , wherein data transfer range data, which includes a range of a predetermined address region of the non-volatile memory, is held in the non-volatile memory. 
     
     
         111 . The mobile telephone according to  claim 101 , wherein a data-hold operation of the dynamic random access memory is executed inside the memory module. 
     
     
         112 . The mobile telephone according to  claim 111 , wherein, when the data-hold operation is provided to the dynamic random access memory from the device, the data-hold operation of the dynamic random access memory inside the memory module is stopped. 
     
     
         113 . The mobile telephone according to  claim 101 , wherein:
 the device accesses the memory module first;   the dynamic random access memory performs a data-hold operation second; and   the memory module performs data transfer between the non-volatile memory and the static random access memory or the dynamic random access memory third.   
     
     
         114 . The mobile telephone according to  claim 101 ,
 wherein the dynamic random access memory is synchronous, and   wherein access to the non-volatile memory and the dynamic random access memory from the device is made via the dynamic random memory access interface.   
     
     
         115 . The mobile telephone according to  claim 101 ,
 wherein the non-volatile memory is a NAND flash memory, and   wherein the dynamic random access memory is synchronous.   
     
     
         116 . The mobile telephone according to  claim 101 ,
 wherein the non-volatile memory is an AND flash memory, and   wherein the dynamic random access memory is synchronous.   
     
     
         117 . The mobile telephone according to  claim 101 , wherein the non-volatile memory performs error detection, error correction, and address replacement. 
     
     
         118 . The mobile telephone according to  claim 117 , wherein a memory array of the non-volatile memory is configured according to NAND configuration. 
     
     
         119 . The mobile telephone according to  claim 117 , wherein a memory array of the non-volatile memory is configured according to AND configuration. 
     
     
         120 . The mobile telephone according to  claim 101 , wherein the dynamic random access memory includes a second control circuit which processes access from the device and a third control circuit that independently accesses the non-volatile memory. 
     
     
         121 . The mobile telephone according to  claim 101 , wherein the dynamic random access memory includes a second control circuit that independently accesses the non-volatile memory and a circuit to subordinately process access to the non-volatile memory by the second control circuit.