Sb-Te-Based Alloy Sintered Compact Sputtering Target

Abstract

Provided is an Sb—Te-based alloy sintered compact sputtering target having Sb and Te as its main component and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles, wherein the average grain size of the Sb—Te-based alloy particles is 3 μm or less and the standard deviation thereof is less than 1.00, the average grain size of C or B is 0.5 μm or less and the standard deviation thereof is less than 0.20, and, when the average grain size of the Sb—Te-based alloy particles is X and the average grain size of carbon or boron is Y, Y/X is within the range of 0.1 to 0.5. The present invention aims to improve the structure of the Sb—Te-based alloy sputtering target, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing in the sputtering process.

1 . An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as its main component and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles, wherein the average grain size of the Sb—Te-based alloy particles is 3 μm or less and the standard deviation thereof is less than 1.00, the average grain size of C or B is 0.5 μm or less and the standard deviation thereof is less than 0.20, and, when the average grain size of the Sb—Te-based alloy particles is X and the average grain size of carbon or boron is Y, Y/X is within the range of 0.1 or more and to 0.5 or less. 
     
     
         2 . The Sb—Te-based alloy sintered compact sputtering target according to  claim 1  containing, at a maximum, 30 at % of one or more types of elements selected from Ag, In, Si, Ge, Ga, Ti, Au, Pt, and Pd. 
     
     
         3 . The Sb—Te-based alloy sintered compact sputtering target according to  claim 2 , wherein the target is used for forming a phase-change recording layer formed from Ag—In—Sb—Te alloy or Ge—Sb—Te alloy containing carbon or boron. 
     
     
         4 . The Sb—Te-based alloy sintered compact sputtering target according to  claim 3 , wherein the average deflective strength as an index of the mechanical strength of ceramics is 100 MPa or higher. 
     
     
         5 . The Sb—Te-based alloy sintered compact sputtering target according to  claim 1 , wherein the target is used for forming a phase-change recording layer formed from Ag—In—Sb—Te alloy or Ge—Sb—Te alloy containing carbon or boron. 
     
     
         6 . The Sb—Te-based alloy sintered compact sputtering target according to  claim 1 , wherein an average deflective strength of the sputtering target as an index of mechanical strength of ceramics is 100 MPa or higher.