US2012279866A1PendingUtilityA1

Method of forming a multilayer structure

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Assignee: FREDENBERG MIKAELPriority: Nov 18, 2005Filed: Mar 30, 2012Published: Nov 8, 2012
Est. expiryNov 18, 2025(expired)· nominal 20-yr term from priority
H10P 50/667H10P 14/47H10W 20/063H10W 20/056H10W 20/043H10W 20/039H10W 20/033H10W 20/031C25D 7/12C25D 7/126H05K 2203/0733H05K 2203/0117H05K 3/4647C25F 3/14H05K 3/241H05K 3/108C25D 1/003C25D 5/10C25D 7/123C25D 5/02C25D 5/022C25D 5/50H05K 3/07B81C 99/0085C23C 14/3414C25D 1/10Y10T156/10C23C 14/34
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Claims

Abstract

A multilayer structure is formed by electroetching or electroplating on a substrate. A seed layer is arranged on the substrate and a master electrode is applied thereto. The master electrode has a pattern layer forming multiple electrochemical cells with the substrate. A voltage is applied for etching the seed layer or applying a plating material to the seed layer. A dielectric material is arranged between the structures thus formed. The dielectric layer is planarized for uncovering the structure below and another structure layer is formed on top of the first. Alternatively, the dielectric layer is applied with a thickness two layers and the structure below is accessed by selective etching of the dielectric layer for selectively uncovering the top surface of the structure below. Multiple structure layer may also be formed in one step.

Claims

exact text as granted — not AI-modified
1 - 76 . (canceled) 
     
     
         77 . A method of forming a multilayer structure by electrochemical plating on a substrate, wherein said substrate or said substrate layer comprises vias, the method comprising:
 a) arranging an electrically conducting seed layer on at least a part of the substrate or a substrate layer and said vias;   b) applying a master electrode, in which an insulating pattern layer is provided with cavities at least opposite to said vias, and wherein said cavities have a width which is slightly smaller, equal or slightly larger than the width of said vias; and a predeposited anode material is arranged in said cavities; and   c) applying a voltage between a conducting electrode layer and said seed layer for transferring at least some parts of said anode material for forming plated structures in said vias.

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