Fabrication method for organic electronic device and organic electronic device fabricated by the same method

Abstract

The present invention provides a fabrication method for an organic electronic device comprising a step of stacking sequentially a first electrode made of a metal, one or more organic material layers, and a second electrode on a substrate, wherein the method comprises the steps of: 1) forming a layer on the first electrode using a metal having a higher oxidation rate than the first electrode before forming the organic material layer, 2) treating the layer formed using a metal having a higher oxidation rate than the first electrode with oxygen plasma to form a metal oxide layer, and 3) treating the metal oxide layer with inert gas plasma to remove a native oxide layer on the first electrode, and an organic electronic device fabricated by the same method.

1 - 16 . (canceled) 
     
     
         17 . An organic electronic device having a configuration in which a first electrode made of a metal, one or more organic material layers, and a second electrode are stacked sequentially, wherein after forming the first electrode and before forming the organic material layer, a layer is formed using a metal having a higher oxidation rate than the first electrode, and the formed layer is sequentially treated with oxygen plasma and inert gas plasma to remove a native oxide layer on the first electrode. 
     
     
         18 . The organic electronic device according to  claim 17 , wherein the first electrode is formed of a material selected from the group consisting of aluminum, molybdenum, chromium, magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, silver, tin, lead or alloy thereof. 
     
     
         19 . The organic electronic device according to  claim 17 , wherein the metal having a higher oxidation rate than the first electrode is selected from alkali metal, alkaline earth metal, and a mixture thereof. 
     
     
         20 . The organic electronic device according to  claim 17 , wherein the layer formed by using the metal having a higher oxidation rate than the first electrode is formed to a thickness of 1 to 10 nm. 
     
     
         21 . The organic electronic device according to  claim 17 , wherein the inert gas is argon (Ar), krypton (Kr), xenon (Xe) or radon (Rn). 
     
     
         22 . The organic electronic device according to  claim 17 , wherein the condition of the oxygen plasma treatment is an RF power of 60 to 100 W, an oxygen flow rate of 20 to 50 sccm, a pressure of 10 to 20 mtorr, and a time of 30 to 100 seconds. 
     
     
         23 . The organic electronic device according to  claim 17 , wherein the condition of the inert gas plasma treatment is an RF power of 300 to 600 W, an inert gas flow rate of 5 to 20 sccm, a pressure of 5 to 20 mtorr, and a time of 200 to 500 seconds. 
     
     
         24 . The organic electronic device according to  claim 17 , wherein the organic electronic device is an organic light emitting device. 
     
     
         25 . The organic electronic device according to  claim 24 , wherein the first electrode is an anode, and the second electrode is a cathode. 
     
     
         26 . The organic electronic device according to  claim 24 , wherein the first electrode is a cathode, and the second electrode is an anode. 
     
     
         27 . The organic electronic device according to  claim 24 , wherein the organic material layer comprises one or more layer selected from the group consisting of a light emitting layer, an electron transporting layer, an electron injecting layer, a hole injecting layer, and a hole transporting layer. 
     
     
         28 . The organic electronic device according to  claim 24 , wherein among the organic material layers, a layer making contact with the layer formed by using a metal having a higher oxidation rate than the first electrode is an electron injecting layer or a hole injecting layer. 
     
     
         29 . The organic electronic device according to  claim 24 , wherein the organic light emitting device is of a top light emitting type, or of a dual light emitting type. 
     
     
         30 . The organic electronic device according to  claim 17 , wherein the organic electronic device is an organic thin film transistor, the first electrode is a gate electrode, and the second electrode comprises a source electrode and a drain electrode. 
     
     
         31 . The organic electronic device according to  claim 17 , wherein the organic electronic device is an organic solar cell, and the organic material layer comprises an electron donor layer and an electron acceptor layer.