Solid-state image sensor and imaging system

Abstract

At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

1 . A method of formation of a solid state image sensor comprising:
 depositing at least one source-drain region of MOS transistors;   depositing a first layer on the at least one source drain region;   planarizing the first layer;   depositing a plurality of mixed layers, wherein a mixed layer includes an insulating layer and a wiring layer, wherein the wiring layer furthest from the first layer is referred to as the outer wiring layer;   planarizing each of the mixed layers in the plurality of alternating layers;   depositing a plasma SiN layer on the outer wiring layer;   heating the plasma SiN layer at a target temperature in a target environment for a target period of time; and   depositing an optical element on the plasma SiN layer.