Method and process for metallic stamp replication for large area nanopatterns

Abstract

A method and process for obtaining a metal stamp from an intermediate polymer stamp comprising the steps of providing a first print layer on top of a first polymer layer, imprinting structures to obtain an intermediate stamp. A conductive layer is provided on top of the structures to obtain a seed layer if the imprinted polymer is a non-conductive, plating metal on top of the intermediate polymer stamp to obtain a metal stamp then separating the intermediate stamp from the metal stamp. This invention demonstrates stamp replication in high throughput and at low cost.

1 . A method for obtaining a metal stamp with the same structure as a master stamp from at least one intermediate stamp, comprising the steps:
 providing a first imprint layer on top of a first carrier substrate;   imprinting structures in the first imprint layer using a master stamp to obtain a first intermediate stamp;   providing a conductive layer on top of the structured first intermediate stamp to obtain a seed layer;   plating metal on top of the seed layer to obtain a metal stamp;   separating the first intermediate stamp from the metal stamp.   
     
     
         2 . A method for obtaining a metal stamp with a structure inverse to that of a master stamp from at least two intermediate stamps, comprising the steps:
 providing a first imprint layer on top of a first carrier substrate;   imprinting structures in the first imprint layer using a master stamp to obtain a first intermediate stamp;   providing a second imprint layer on top of a second carrier layer;   using the said first intermediate stamp to imprint structures in the second imprint layer in order to obtain a second intermediate stamp;   providing a conductive layer on top of the second intermediate stamp to obtain a seed layer;   plating metal on top of the seed layer to obtain a metal stamp;   separating the second intermediate stamp from the metal stamp.   
     
     
         3 . Method according to  claim 1 , wherein the first carrier substrate comprises polymer material. 
     
     
         4 . Method according to  claim 1 , further comprising the step of providing anti-sticking molecules in the imprint layer before obtaining the seed layer. 
     
     
         5 . Method according to the  claim 1 , wherein in the first carrier substrate comprises a transparent material. 
     
     
         6 . Method according to  claim 2 , wherein the second carrier substrate comprises a transparent or a nontransparent material. 
     
     
         7 . Method according to  claim 1  wherein the carrier substrate comprises glass, a semiconductor material or metals. 
     
     
         8 . Method according to  claim 2 , wherein the first and second imprint layers are coated on top of the carrier substrates. 
     
     
         9 . Method according to  claim 1 , wherein the seed layer is sputtered on top of the structures in the first intermediate stamp. 
     
     
         10 . Method according to  claim 2 , wherein the seed layer is sputtered on top of the structures in the second intermediate stamp. 
     
     
         11 . Method according to  claim 1 , wherein the thickness of the seed layer is at least one atomic conductive layer. 
     
     
         12 . Method according to the recited  claim 11 , wherein the seed layer comprises conductive material. 
     
     
         13 . Method according to the recited  claim 12 , wherein the conductive material comprises metal. 
     
     
         14 . Method according to the recited  claim 13 , wherein the metal is composed of at least one of the metals nickel, gold, silver, titanium, copper and aluminum. 
     
     
         15 . Method according to  claim 1 , wherein the metal stamp is electroplated on top of the conductive layer. 
     
     
         16 . Method according to the recited  claim 1 , wherein the first imprint layer material comprises a conductive polymer. 
     
     
         17 . Method according to the recited  claim 2 , wherein the second imprint layer material comprises a conductive polymer. 
     
     
         18 . Method according to the recited  claim 17 , wherein the metal stamp is electroplated on top of the conductive polymer. 
     
     
         19 . Method according to  claim 1 , wherein the separation between the intermediate stamp and the metal stamp is achieved by mechanical demolding. 
     
     
         20 . Method according to  claim 1 , wherein the method is performed at constant temperature in the range of 15-100° C. 
     
     
         21 . Method according to  claim 1 , wherein the structures imprinted in the imprint layer comprise micro and nano-structures. 
     
     
         22 . Method according to  claim 1 , wherein the structures have a size greater than 5 nm.