US2012308933A1PendingUtilityA1

Radiation sensitive self-assembled monolayers and uses thereof

56
Assignee: AFZALI-ARDAKANI ALIPriority: Jun 2, 2006Filed: Aug 15, 2012Published: Dec 6, 2012
Est. expiryJun 2, 2026(expired)· nominal 20-yr term from priority
G03F 7/165C23C 22/02G03F 7/405B82Y 10/00
56
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.

Claims

exact text as granted — not AI-modified
1 . A lithographic process for patterning a substrate comprising:
 providing a substrate and attaching a plurality of radiation sensitive compounds to the substrate, wherein the radiation sensitive compounds include a surface binding group for attachment to the substrate and a metal binding group;   exposing the surface attached radiation sensitive compounds to UV or e-beam radiation; and   complexing the metal binding group of the radiation sensitive compounds with a metal species selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form metallized radiation sensitive compounds in a predetermined pattern on the substrate.   
     
     
         2 . The process of  claim 1  further comprising attaching a connecting ligand to the metallized radiation sensitive compounds followed by complexing a second metal species to the connecting ligand. 
     
     
         3 . The process of  claim 1  further comprising transferring the pattern to the underlying substrate by dry etching. 
     
     
         4 . The process of  claim 1  wherein the surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material. 
     
     
         5 . The process of  claim 1  wherein the radiation sensitive group is adjacent to the metal binding group and is displaced from the metal binding group upon exposure to said UV or e-beam radiation, thereby activating the metal binding group to interact with a metal species. 
     
     
         6 . The process of  claim 1  wherein the surface binding group is selected from the group consisting of thiols, selenols, isocyanides, chloro silanes, alkoxy silanes, phosphonic acids, hydroxamic acids, aldehydes and carboxylic acids. 
     
     
         7 . The process of  claim 1  wherein the metal binding group is selected from the group consisting of a nitrogen heterocycle, phosphonic acids, sulfonic acids and isocyanides. 
     
     
         8 . The process of  claim 1  wherein the radiation sensitive group is selected from the group consisting of nitrobenzyl, benzyl ether, succinimidyl sulfonic acids, thiols and disulfides. 
     
     
         9 . The process of  claim 1  wherein the radiation sensitive compound is represented by formula I
   SB-BP-MB-RS  I
 
 wherein SB is a surface binding group; BP is a body portion; MB is a metal binding group; and RS is a radiation sensitive group, wherein the radiation sensitive group is displaced from the metal binding group upon exposure to UV or e-beam radiation, thereby activating the metal binding group to interact with a metal species. 
 
     
     
         10 . The process of  claim 9  wherein the surface binding group is selected from the group consisting of thiols, selenols, isocyanides, chloro silanes, alkoxy silanes, phosphonic acids, hydroxamic acids, aldehydes and carboxylic acids. 
     
     
         11 . The process of  claim 10  wherein the radiation sensitive group is selected from the group consisting of nitrobenzyl, benzyl ether, succinimidyl sulfonic acids, thiols and disulfides. 
     
     
         12 . The process of  claim 1  wherein the radiation sensitive compound is represented by formula II
   SB-RSBP-MB  II
 
 wherein SB is a surface binding group; MB is a metal binding group; and RSBP is a body portion that includes a radiation sensitive group that causes the displacement of the metal binding group from the compound upon exposure to UV or e-beam radiation, wherein the radiation sensitive group in the body portion is not an amine. 
 
     
     
         13 . The process of  claim 12  wherein the surface binding group is selected from the group consisting of thiols, selenols, isocyanides, chloro silanes, alkoxy silanes, phosphonic acids, hydroxamic acids, aldehydes and carboxylic acids. 
     
     
         14 . The process of  claim 13  wherein the radiation sensitive group is selected from the group consisting of nitrobenzyl, benzyl ether, succinimidyl sulfonic acids, thiols and disulfides. 
     
     
         15 . The process of  claim 1  wherein the radiation sensitive compound is represented by formula I or formula II
   SB-BP-MB-RS  I
 
 wherein in formula I, SB is a surface binding group; BP is a body portion; MB is a metal binding group; and RS is a radiation sensitive group, wherein the radiation sensitive group is displaced from the metal binding group upon exposure to UV or e-beam radiation, thereby activating the metal binding group to interact with a metal species;
   SB-RSBP-MB  II
 
 
 wherein in formula II, SB is a surface binding group; MB is a metal binding group; and RSBP is a body portion that includes a radiation sensitive group that causes the displacement of the metal binding group from the compound upon exposure to UV or e-beam radiation, wherein the radiation sensitive group in the body portion is not an amine; and wherein in formula I and in formula II, the metal binding group is selected from the group consisting of pyridine, dipyridine, terpyridine, phosphonic acids, sulfonic acids and isocyanides. 
 
     
     
         16 . The process of  claim 1  wherein the radiation compound is selected from the group consisting of the compounds represented by the following formulae: 
       
         
           
           
               
               
           
         
       
     
     
         17 . The process of  claim 15  wherein the surface binding group is selected from the group consisting of thiols, selenols, isocyanides, chloro silanes, alkoxy silanes, phosphonic acids, hydroxamic acids, aldehydes and carboxylic acids. 
     
     
         18 . The process of  claim 17  wherein the radiation sensitive group is selected from the group consisting of nitrobenzyl, benzyl ether, succinimidyl sulfonic acids, thiols and disulfides. 
     
     
         19 . The process of  claim 15  wherein the radiation sensitive group is selected from the group consisting of nitrobenzyl, benzyl ether, succinimidyl sulfonic acids, thiols and disulfides.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.