US2012309126A1PendingUtilityA1
Method of manufacturing photoelectrode structure
Est. expiryMay 30, 2031(~4.9 yrs left)· nominal 20-yr term from priority
H10F 71/00H10F 77/20H10F 10/00H01G 9/2059H01G 9/2031Y02P70/50Y02E10/542H01G 9/209
48
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Claims
Abstract
A method of forming a photoelectrode structure includes: disposing a light-scattering layer including a nanowire on a photoanode substrate; and coating the light-scattering layer with an inorganic binder solution to fix the light-scattering layer on the photoanode substrate. Due to the structure of the photoelectrode structure, the adhesive force between the light-scattering layer and the photoanode substrate is enhanced and the photocurrent density is increased.
Claims
exact text as granted — not AI-modified1 . A method of manufacturing a photoelectrode structure, the method comprising:
disposing a light-scattering layer comprising a nanowire on a photoanode substrate; and applying an inorganic binder solution to the light-scattering layer to fix the light-scattering layer on the photoanode substrate.
2 . The method of claim 1 , wherein the photoanode substrate comprises:
a light-transmissible conductive substrate; and a light-absorbing layer on the light-transmissible conductive substrate and comprising nanoparticles to which a dye is absorbed.
3 . The method of claim 2 , wherein the nanoparticles comprise a material selected from the group consisting of titanium (Ti) oxide, tin (Sn) oxide, niobium (Nb) oxide, zirconium (Zr) oxide, tungsten (W) oxide, vanadium (V) oxide, copper (Cu) oxide, iron (Fe) oxide, lead (Pb) oxide, bismuth (Bi) oxide, cadmium (Cd) oxide, tantalum (Ta) oxide, strontium (Sr) oxide, indium (In) oxide, iridium (Ir) oxide, lanthanum (La) oxide, molybdenum (Mo) oxide, magnesium (Mg) oxide, aluminum (Al) oxide, yttrium (Y) oxide, scandium (Sc) oxide, samarium (Sm) oxide, gallium (Ga) oxide, strontium titanium (SrTi) oxide, potassium tantalum (KTa) oxide, barium titanium (BaTi) oxide, iron titanium (FeTi) oxide, yttrium iron (YFe) oxide, cadmium iron (CdFe) oxide, lead iron (PbFe) oxide, mercury niobium (HgNb) oxide, ZnS, In 2 S 3 , CdS, ZrS 2 , HgS, MoS 2 , HfS 2 , Fe 2 S, PbS, and combinations thereof.
4 . The method of claim 2 , wherein the nanoparticles have a diameter of about 5 to about 50 nm.
5 . The method of claim 2 , wherein the light-scattering layer covers at least a portion of the light-absorbing layer, and at least a portion of the light-scattering layer contacts the light-transmissible conductive substrate.
6 . The method of claim 1 , wherein the nanowire comprises a material selected from the group consisting of titanium (Ti) oxide, tin (Sn) oxide, niobium (Nb) oxide, zirconium (Zr) oxide, tungsten (W) oxide, vanadium (V) oxide, copper (Cu) oxide, iron (Fe) oxide, lead (Pb) oxide, bismuth (Bi) oxide, cadmium (Cd) oxide, tantalum (Ta) oxide, strontium (Sr) oxide, indium (In) oxide, iridium (Ir) oxide, lanthanum (La) oxide, molybdenum (Mo) oxide, magnesium (Mg) oxide, aluminum (Al) oxide, yttrium (Y) oxide, scandium (Sc) oxide, samarium (Sm) oxide, gallium (Ga) oxide, strontium titanium (SrTi) oxide, potassium tantalum (KTa) oxide, barium titanium (BaTi) oxide, iron titanium (FeTi) oxide, yttrium iron (YFe) oxide, cadmium iron (CdFe) oxide, lead iron (PbFe) oxide, mercury niobium (HgNb) oxide, ZnS, In 2 S 3 , CdS, ZrS 2 , HgS, MoS 2 , HfS 2 , Fe 2 S, PbS, and combinations thereof.
7 . The method of claim 1 , wherein the nanowire comprises titanium dioxide (TiO 2 ).
8 . The method of claim 1 , wherein the nanowire has a diameter of about 100 to about 600 nm.
9 . The method of claim 1 , wherein the light-scattering layer has a structure in which the nanowire is tangled.
10 . The method of claim 1 , wherein the disposing the light-scattering layer comprises electrospinning and heat treating a precursor solution on a surface of the photoanode substrate, the precursor solution comprising a nanowire precursor.
11 . The method of claim 10 , wherein the nanowire precursor comprises a material selected from the group consisting of titanium isopropoxide, titanium ethoxide, titanium chloride, titanium methoxide, and combinations thereof.
12 . The method of claim 10 , wherein the electrospinning is performed at a voltage of about 5 to about 10 kV, a speed of about 10 to about 20 μl/minute, for about 1 to about 20 minutes.
13 . The method of claim 10 , wherein during electrospinning of the precursor solution, the temperature of the photoanode substrate is maintained at about 100 to about 350° C.
14 . The method of claim 10 , wherein the heat treatment is performed at a temperature of about 400 to about 600° C.
15 . The method of claim 1 , wherein a thickness of the light-scattering layer is about 0.5 to about 3 μm.
16 . The method of claim 1 , further comprising fixing the dye to the light-scattering layer after either the disposing the light-scattering layer or the fixing of the light-scattering layer.
17 . The method of claim 1 , wherein the inorganic binder solution comprises a TiO 2 sol.
18 . The method of claim 17 , wherein the TiO 2 sol comprises TiO 2 nanoparticles having a diameter of about 5 to about 50 nm.
19 . The method of claim 1 , wherein the inorganic binder solution comprises a NbCl 5 -containing solution.
20 . The method of claim 19 , wherein the NbCl 5 -containing solution comprises about 10 to about 40 mM of NbCl 5 .
21 . The method of claim 1 , wherein the applying the inorganic binder solution comprises a method selected from the group consisting of spin coating, dip coating, roll coating, screen coating, spray coating, screen printing, and combinations thereof.
22 . The method of claim 1 , further comprising heat treating the light-scattering layer coated with the inorganic binder solution after the applying the inorganic binder solution.
23 . The method of claim 22 , wherein the heat treating of the light-scattering layer coated with the inorganic binder solution is performed at a temperature of about 400 to about 500° C.Cited by (0)
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