Multi-heater system for growing high quality diamond and a method for growing the same

Abstract

Disclosed herein is an apparatus and method for growing a diamond. The apparatus for growing a diamond comprises: a reaction cell that is configured to grow the diamond therein; a main heater including a main heating surface that is arranged along a first inner surface of the reaction cell; and a sub-heater including a sub-heating surface that is arranged along a second inner surface of the reaction cell, the second inner surface being non-parallel with the first inner surface.

1 . An apparatus for growing a diamond, comprising:
 a reaction cell that is configured to grow the diamond therein;   a main heater including a main heating surface arranged along a first inner surface of the reaction cell; and   a sub-heater including a sub-heating surface arranged along a second inner surface of the reaction cell, the second inner surface being non-parallel with the first inner surface.   
     
     
         2 . The apparatus according to  claim 1 , wherein the reaction cell comprises a multi-layer structure including a diamond seed, the main heater and the sub-heater being configured to heat the multi-layer structure from different angles. 
     
     
         3 . The apparatus according to  claim 1 , wherein the first inner surface of the reaction cell is arranged approximately orthogonal to the second inner surface of the reaction cell. 
     
     
         4 . The apparatus according to  claim 1 , wherein the first heating surface of the main heater is cylindrical in shape and the second heating surface of the sub-heater is in the shape of a disc. 
     
     
         5 . The apparatus according to  claim 1 , wherein the sub-heater includes two electrodes that are approximately 180° apart from each other. 
     
     
         6 . The apparatus according to  claim 1 , further comprising a third heater including a third heating surface that is arranged apart from and in parallel to the first heating surface of the main heater. 
     
     
         7 . The apparatus according to  claim 6 , wherein the third heating surface of the third heater is in the shape of a ring. 
     
     
         8 . The apparatus according to  claim 7 , wherein the third heater includes two electrodes that are approximately 180° apart from each other. 
     
     
         9 . The apparatus according to  claim 6 , further comprising a fourth heater including a fourth heating surface that is arranged in the reaction cell on a side opposite the second heating surface of the sub-heater. 
     
     
         10 . The apparatus according to  claim 9 , further comprising a fifth heater including a fifth heating surface that is arranged in parallel with the fourth heating surface of the fourth heater, the fourth and fifth heating surfaces being in disc shape. 
     
     
         11 . The apparatus according to  claim 10 , wherein the first heating surface of the main heater is in a cylindrical shape and the third heating surface of the third heater is in a ring shape; and wherein the sub-heater, the third heater, and fifth heater being on a top side of the main heater. 
     
     
         12 . The apparatus according to  claim 1 , further comprising a controller that controls the main heater and the sub-heater independently. 
     
     
         13 . The apparatus according to  claim 1 , wherein the main heating surface of the main heater contains graphite and the sub-heating surface of the sub-heater contains graphite and Molybdenum (Mo). 
     
     
         14 . A method of growing a diamond in a reaction cell containing a carbon source, a solvent metal, and a diamond seed crystal, comprising:
 controlling a main heater including a main heating surface that is arranged along a first inner surface of the reaction cell in such a way that the main heating surface is heated up to allow the carbon source to dissolve in the solvent metal; and   controlling a sub-heater including a sub-heating surface that is arranged along a second inner surface of the reaction cell in such a way that the sub-heating surface is heated up to allow the carbon source to dissolve in the solvent metal, wherein the second inner surface is non-parallel with the first inner surface.   
     
     
         15 . The method according to  claim 14 , further comprising:
 after controlling the main heater and the sub-heater, controlling a third heater including a third heating surface that is arranged apart from and in parallel to the first heating surface of the main heater in such a way that the third heating surface is heated up to increase a temperature gradient existing between the carbon source and the diamond seed crystal.   
     
     
         16 . The method according to  claim 15 , wherein the step of controlling the third heater begins after a predetermined time period after the step of controlling the main heater begins. 
     
     
         17 . The method according to  claim 16 , wherein the predetermined time period is more than 24 hours. 
     
     
         18 . The method according to  claim 15 , wherein the steps of controlling the main heater, sub-heater, and third heater is programmed to achieve an optimized condition for producing high-quality transparent yellow diamond crystals. 
     
     
         19 . An apparatus for growing a diamond, comprising:
 a reaction cell that is configured to grow the diamond therein;   a first heater including a first heating surface that is arranged along an inner surface of the reaction cell; and   a second heater including a second heating surface that is arranged substantially parallel to the first heating surface of the first heater, the second heating surface being smaller than the first heating surface.   
     
     
         20 . The apparatus according to  claim 19 , wherein the first heating surface of the first heater is in cylindrical shape and the second heating surface of the second heater is arranged outside of the first heating surface of the first heater so that the first and second heating surfaces are overlapped with respect to a central axis of the cylindrical first heating surface.