Manufacturing method of semiconductor apparatus

Abstract

The manufacturing method of a semiconductor apparatus has a step for carrying in the substrate into the processing chamber; a step for heating the processing chamber and the substrate to the predetermined temperature; and a gas supply and exhaust step for supplying and exhausting desired gas into and from the processing chamber, wherein the gas supply and exhaust step repeats by the predetermined times a first supply step for supplying silicon-type gas and hydrogen gas into the processing chamber; a first exhaust step for exhausting at least said silicon-type gas from the processing chamber; a second supply step for supplying chlorine gas and hydrogen gas into the processing chamber; and a second exhaust step for exhausting at least the chlorine gas from the processing chamber.

1 . A substrate processing apparatus for selectively growing an epitaxial film at a surface of a substrate stored in a processing chamber, by using at least silicon-containing gas and chlorine gas, and by supplying alternately repeatedly said silicon-containing gas and said chlorine gas into said processing chamber, comprising:
 the processing chamber for storing the substrate;   a heating unit for heating said substrate and the atmosphere of the inside of said processing chamber, installed at the outside of said processing chamber;   a gas supply unit for supplying desired gas into said processing chamber;   an exhaust port opening at said processing chamber; and   a control part for controlling at least said heating unit and said gas supply unit,   wherein said gas supply unit comprises;   a first gas supply member for supplying silicon-containing gas;   a second gas supply member for supplying chlorine gas; and   a third gas supply member for supplying hydrogen gas,   and said control part controls said gas supply unit so that hydrogen gas is simultaneously supplied in case of supplying said silicon-containing gas into the inside of said processing chamber, and   controls said gas supply unit so that hydrogen gas is simultaneously supplied in case of supplying said chlorine gas into the inside of said processing chamber.   
     
     
         2 . The substrate processing apparatus according to  claim 1 , wherein said control part, in case of supplying at least said chlorine gas, controls said heating unit so that the atmosphere of the inside of said processing chamber and said substrate is heated at equal to or lower than 700° C.