Radioactive-ray imaging apparatus, radioactive-ray imaging display system and transistor

Abstract

Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer insulation film; an insulation film provided on the other surface side of the semiconductor layer; source and drain electrodes provided by being electrically connected to the semiconductor layer; and a shield electrode layer provided in such a way that at least portions of the shield electrode layer face edges of the first gate electrode, wherein at least one of the first gate insulation film, the first interlayer insulation film and the insulation film include a silicon-oxide film.

1 . A transistor comprising:
 a semiconductor layer;   a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of said semiconductor layer;   a first gate electrode provided at a location between said first gate insulation film and said first interlayer insulation film;   an insulation film provided on the other surface side of said semiconductor layer;   source and drain electrodes provided by being electrically connected to said semiconductor layer; and   a shield electrode layer provided in such a way that at least portions of said shield electrode layer face edges of said first gate electrode,   wherein at least one of said first gate insulation film, said first interlayer insulation film and said insulation film include a silicon-oxide film.   
     
     
         2 . The transistor according to  claim 1  further including a second gate electrode facing said first gate electrode through said semiconductor layer, wherein
 said second gate electrode, said insulation film, said semiconductor layer, said first gate insulation film, said first gate electrode and said first interlayer insulation film are sequentially created on a substrate in the same order as an order in which said second gate electrode, said insulation film, said semiconductor layer, said first gate insulation film, said first gate electrode and said first interlayer insulation film are enumerated in this sentence. 
 
     
     
         3 . The transistor according to  claim 1  wherein
 said shield electrode layer is provided on said first interlayer insulation film. 
 
     
     
         4 . The transistor according to  claim 3  wherein:
 one or both of said source electrode and said drain electrode are provided on said first interlayer insulation film by being extended to areas facing said edges of said first gate electrode; and 
 portions included in said source electrode and said drain electrode to serve as portions facing said edges of said first gate electrode also function as said shield electrode layer. 
 
     
     
         5 . The transistor according to  claim 3  wherein:
 only said drain electrode is selected from said source electrode and said drain electrode to serve as an electrode to be provided on said first interlayer insulation film by being extended to an area facing said edge of said first gate electrode; and 
 a portion included in said drain electrode to serve as a portion facing said edge of said first gate electrode also functions as said shield electrode layer. 
 
     
     
         6 . The transistor according to  claim 3 , said transistor further having a second interlayer insulation film provided on said source electrode and said drain electrode,
 wherein said second interlayer insulation film includes a silicon-oxide film.   
     
     
         7 . The transistor according to  claim 3  wherein
 said source electrode, said drain electrode and said shield electrode layer are provided on said first interlayer insulation film by being electrically disconnected from each other. 
 
     
     
         8 . The transistor according to  claim 7 , said transistor further comprising a second interlayer insulation film provided on said source electrode, said drain electrode and said shield electrode layer,
 wherein said second interlayer insulation film includes a silicon-oxide film.   
     
     
         9 . The transistor according to  claim 7  wherein
 said shield electrode layer is held at a negative electric potential. 
 
     
     
         10 . The transistor according to  claim 2  wherein
 a plurality of sets each consisting of said first and second gate electrodes are provided for a pair of said source and drain electrodes. 
 
     
     
         11 . The transistor according to  claim 1  wherein
 said first gate electrode, said first gate insulation film, said semiconductor layer, said insulation film and said first interlayer insulation film are sequentially created on a substrate in the same order as an order in which said first gate electrode, said first gate insulation film, said semiconductor layer, said insulation film and said first interlayer insulation film are enumerated in this sentence. 
 
     
     
         12 . The transistor according to  claim 1  wherein
 said insulation film, said semiconductor layer, said first gate insulation film, said first gate electrode and said first interlayer insulation film are sequentially created on a substrate in the same order as an order in which said insulation film, said semiconductor layer, said first gate insulation film, said first gate electrode and said first interlayer insulation film are enumerated in this sentence. 
 
     
     
         13 . The transistor according to  claim 1  wherein
 said semiconductor layer is made of polysilicon. 
 
     
     
         14 . The transistor according to  claim 1  wherein
 said silicon-oxide film is made of silicon oxide (SiO 2 ). 
 
     
     
         15 . A radioactive-ray imaging apparatus comprising a pixel section having a transistor and a photoelectric conversion device, said transistor including:
 a semiconductor layer;   a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of said semiconductor layer;   a first gate electrode provided at a location between said first gate insulation film and said first interlayer insulation film;   an insulation film provided on the other surface side of said semiconductor layer;   source and drain electrodes provided by being electrically connected to said semiconductor layer; and   a shield electrode layer provided in such a way that at least portions of said shield electrode layer face edges of said first gate electrode, wherein   at least one of said first gate insulation film, said first interlayer insulation film and said insulation film include a silicon-oxide film.   
     
     
         16 . The radioactive-ray imaging apparatus according to  claim 15  wherein
 a wavelength conversion layer is provided on said pixel section to serve as a layer for changing the wavelength of an incident radioactive ray to a wavelength in a sensitive region of said photoelectric conversion device. 
 
     
     
         17 . The radioactive-ray imaging apparatus according to  claim 15  wherein
 said photoelectric conversion device has a function for absorbing a radioactive ray and converting said radioactive ray into an electrical signal. 
 
     
     
         18 . A radioactive-ray imaging display system employing a radioactive-ray imaging apparatus for acquiring an image based on radioactive rays and a display apparatus for displaying said image acquired by said radioactive-ray imaging apparatus wherein
 said radioactive-ray imaging apparatus includes a pixel section having a transistor and a photoelectric conversion device, said transistor comprising:   a semiconductor layer;   a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of said semiconductor layer;   a first gate electrode provided at a location between said first gate insulation film and said first interlayer insulation film;   an insulation film provided on the other surface side of said semiconductor layer;   source and drain electrodes provided by being electrically connected to said semiconductor layer; and   a shield electrode layer provided in such a way that at least portions of said shield electrode layer face edges of said first gate electrode, and   at least one of said first gate insulation film, said first interlayer insulation film and said insulation film include a silicon-oxide film.