Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device and its manufacturing method are disclosed. The semiconductor device comprises a gate, and source and drain regions on opposite sides of the gate, wherein a portion of a gate dielectric layer located above the channel region is thinner than a portion of the gate dielectric layer located at the overlap region of the drain and the gate. The thicker first thickness portion may ensure that the device can endure a higher voltage at the drain to gate region, while the thinner second thickness portion may ensure excellent performance of the device.

1 . A semiconductor device, comprising:
 a gate located on a substrate;   a source region and a drain region located on opposite sides of the gate; and   a gate dielectric layer located between the substrate and the gate, the gate dielectric layer having a first thickness portion and a second thickness portion, wherein the first thickness portion is at least located between the drain region and the gate, the thickness of the first thickness portion is larger than the thickness of the second thickness portion.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the first thickness portion is further located between the source region and the gate. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the drain region does not extend in a direction from the drain region to the center of the gate beyond the first thickness portion of the gate dielectric layer. 
     
     
         4 . The semiconductor device according to  claim 2 , wherein the source region does not extend in a direction from the source region to the center of the gate beyond the first thickness portion of the gate dielectric layer. 
     
     
         5 . The semiconductor device according to  claim 1 , wherein the thickness of the first thickness portion is greater than or equal to 1 nm and less than or equal to 200 nm. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein the thickness of the second thickness portion is greater than or equal to 0.5 nm and less than 200 nm. 
     
     
         7 . The semiconductor device according to  claim 2 , wherein the drain region has a first conductive type and is arranged in a lightly doped drift region of the first conductive type, and the source region has the first conductive type and is arranged in a well of a second conductive type. 
     
     
         8 . A method of manufacturing a semiconductor device, comprising the following steps:
 providing a semiconductor substrate, forming a patterned dielectric layer on a substrate, the patterned dielectric layer having an opening to expose a portion of an upper surface of the substrate;   forming a first gate dielectric layer and a mask layer on the substrate;   etching the mask layer to retain at least a portion of the mask layer on the first gate dielectric layer within the opening;   etching the first gate dielectric layer using the residual of the mask layer to expose a portion of the substrate within the opening;   forming a second gate dielectric layer on the exposed substrate portion, wherein the thickness of the second gate dielectric layer is less than that of the first gate dielectric layer.   
     
     
         9 . The method according to  claim 8 , wherein the step of removing the mask layer further comprises:
 removing the mask layer so that the residual of the mask layer is located within the opening and is attached to at least one sidewall of the opening.   
     
     
         10 . The method according to  claim 8 , wherein the step of forming a second gate dielectric layer within the opening is further followed by:
 forming a gate on the substrate;   forming a lightly doped drift region of a first conductive type and a well of a second conductive type on opposite sides of the gate, and forming a heavily doped drain region of the first conductive type in the drift region, and forming a source region in the second conductive type well.   
     
     
         11 . The method according to  claim 8 , wherein the step of removing the mask layer further comprises:
 removing the mask layer through dry etching.   
     
     
         12 . The method according to  claim 8 , wherein the step of forming a second gate dielectric layer within the opening comprises thermally growing the second gate dielectric layer in the opening, the second gate dielectric layer has a range of thickness greater than or equal to 0.5 nm and less than 200 nm. 
     
     
         13 . The method according to  claim 8 , wherein forming the first gate dielectric layer and the mask layer within the opening comprises depositing the first gate dielectric layer, the first gate dielectric layer has a range of thickness greater than or equal to 1 nm and less than or equal to 200 nm. 
     
     
         14 . The method according to  claim 8 , wherein the step of forming an opening on the substrate using the patterned dielectric layer comprises:
 forming the dielectric layer on the substrate, which includes a nitride dielectric layer and an oxide dielectric layer;   etching the dielectric layer to form the opening on the substrate and expose a portion of the substrate.   
     
     
         15 . The method according to  claim 10 , further comprising:
 depositing polycrystalline silicon to fill the opening;   removing the polycrystalline silicon through chemical mechanical polishing to retain the polycrystalline silicon portion located within the opening so as to form the gate;   removing the patterned dielectric layer;   forming gate spacers on opposite sides of the gate; and   forming the source and drain regions on opposite sides of the gate.   
     
     
         16 . A semiconductor apparatus including the semiconductor device according to  claim 1 .