US2012318431A1PendingUtilityA1

Method for manufacturing semiconductor device and semiconductor manufacturing apparatus

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Assignee: KATAMURA YUKIOPriority: Apr 23, 2010Filed: Aug 30, 2012Published: Dec 20, 2012
Est. expiryApr 23, 2030(~3.8 yrs left)· nominal 20-yr term from priority
Inventors:Yukio KatamuraYasuo TaneAtsushi YoshimuraFumihiro Iwami
H10W 72/0198H10W 72/0113H10W 72/073H10W 72/354H10W 72/013H10W 72/01365H10W 72/01333H10W 72/01323H10W 90/736H10W 90/734H10W 90/732H10P 72/0434H10P 72/0448Y10T156/10
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Claims

Abstract

In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include, upon attaching a bonding material containing a resin and a solvent to a second surface opposed to a first surface including a circuit pattern of a wafer, heating the bonding material to evaporate the solvent and decreasing vapor pressure of the solvent in an atmosphere faced with the bonding material and heating the attached bonding material to form a bonding layer.

Claims

exact text as granted — not AI-modified
1 . A method for manufacturing a semiconductor device, comprising:
 upon attaching a bonding material containing a resin and a solvent to a second surface opposed to a first surface including a circuit pattern of a pre-diced wafer, heating the bonding material to evaporate the solvent;   decreasing vapor pressure of the solvent in an atmosphere faced with the bonding material; and   heating the attached bonding material to form a bonding layer.   
     
     
         2 . The method according to  claim 1 , wherein in the decreasing the vapor pressure of the solvent in the atmosphere faced with the bonding material, the vapor pressure of the solvent is decreased by removing vapor of the solvent in the atmosphere faced with the bonding material. 
     
     
         3 . The method according to  claim 2 , wherein in the removing the vapor of the solvent in the atmosphere faced with the bonding material, the vapor of the solvent is removed by producing airflow in the atmosphere faced with the bonding material. 
     
     
         4 . The method according to  claim 2 , wherein in the removing the vapor of the solvent in the atmosphere faced with the bonding material, the vapor of the solvent is removed by changing pressure in the atmosphere faced with the bonding material. 
     
     
         5 . The method according to  claim 2 , wherein in the decreasing the vapor pressure of the solvent in the atmosphere faced with the bonding material, the vapor pressure of the solvent is decreased to less than saturated vapor pressure. 
     
     
         6 . The method according to  claim 1 , wherein in the heating the bonding material to evaporate the solvent, a heating temperature of the bonding material is set to 50° C. or more and 100° C. or less. 
     
     
         7 . The method according to  claim 1 , wherein the bonding material further includes an additive having an action of suppressing surface tension difference. 
     
     
         8 . The method according to  claim 1 , wherein a noncontact applicator is used to attach the bonding material containing the resin and the solvent to the second surface. 
     
     
         9 . The method according to  claim 1 , wherein when the bonding material containing the resin and the solvent is attached to the second surface, thickness of the bonding material attached in a film form by a single application is set to 1 μm or less. 
     
     
         10 . The method according to  claim 1 , wherein in the heating the attached bonding material to form a bonding layer, the attached bonding material is heated and converted to B-stage. 
     
     
         11 . The method according to  claim 1 , wherein in the heating the bonding material to evaporate the solvent, the bonding material is heated while decreasing the vapor pressure of the solvent in the atmosphere faced with the bonding material.

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