Method for forming bond between different elements

Abstract

The present invention provides a doping technique that forms a stable amorphous silicon film and a stable polycrystalline silicon film at a low temperature and simultaneously that imparts conductivity in an atmospheric pressure environment. A method for producing a compound containing a bond between different elements belonging to Group 4 to Group 15 of the periodic table, the method included: applying, at a low frequency and atmospheric pressure, high voltage to an inside of an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or an insulator tube or between flat plate electrodes while passing an introduction gas, so as to convert molecules present in the electric discharge tube or between the flat plate electrodes into a plasma; and applying the plasma to substances to be irradiated, the substances to be irradiated being two or more elementary substances or compounds.

1 . A method for producing a compound containing a bond between different elements belonging to Group 4 to Group 15 of the periodic table, the method characterized by comprising:
 applying, at a low frequency and atmospheric pressure, high voltage to an inside of an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or an insulator tube or between two flat plate electrodes provided with high-voltage electrodes while passing an introduction gas, so as to convert molecules present in the electric discharge tube or between the flat plate electrodes into a plasma; and   applying the plasma to substances to be irradiated, the substances to be irradiated being two or more elementary substances belonging to Group 4 to Group 15 of the periodic table, two or more compounds containing the element, or a combination of the elementary substance and the compound.   
     
     
         2 . The production method according to  claim 1 , wherein the compound containing a bond between different elements is a compound containing a bond between different elements belonging to Group 13 to Group 15 of the periodic table. 
     
     
         3 . The production method according to  claim 1 , wherein the plasma or a radical of a surrounding gas excited by the plasma is applied to the substances to be irradiated and ultraviolet light is also applied to the substances to be irradiated. 
     
     
         4 . The production method according to  claim 1 , wherein the compound containing a bond between different elements is obtained as a coating on a substrate. 
     
     
         5 . The production method according to  claim 1 , wherein the substances to be irradiated are two or more substances selected from the group consisting of the elementary substances, the compounds, solutions containing the elementary substances, solutions containing the compounds, gases of the elementary substances, and gases of the compounds. 
     
     
         6 . The production method according to  claim 1 , wherein one of the substances to be irradiated is a compound containing a Group 14 element and another is a gas of an elementary substance belonging to Group 4 to Group 15 or a gas of a compound containing the element. 
     
     
         7 . The production method according to  claim 1 , wherein one of the substances to be irradiated is a compound containing a Group 14 element, another is an elementary substance belonging to Group 13, a compound containing the element, an elementary substance belonging to Group 15, or a compound containing the element, and the elementary substance belonging to Group 13, the compound containing the element, the elementary substance belonging to Group 15, or the compound containing the element is included in a ratio of 0.2 to 10 mol with respect to 1 mol of the compound containing a Group 14 element. 
     
     
         8 . The production method according to  claim 1 , wherein the compound containing a bond between different elements contains a Si—Si bond and a Si—B bond or a Si—P bond. 
     
     
         9 . The production method according to  claim 6 , wherein the compound containing a Group 14 element is at least one silane compound selected from the group consisting of a chain silane compound of Formula (1):
   Si n H 2n+2   Formula (1)
   
       (in Formula (1), n is an integer of 2 to 40), a cyclic silane compound of Formula (2):
   Si h H 2h   Formula (2)
 
 
       (in Formula (2), h is an integer of 3 to 10), a cyclic silane compound of Formula (3):
   Si h H 2h−2   Formula (3)
 
 
       (in Formula (3), h is an integer of 3 to 10), and a cage silane compound of Formula (4):
   Si m H m   Formula (4)
 
 
       (in Formula (4), m is an integer of 6, 8, or 10). 
     
     
         10 . The production method according to  claim 6 , wherein the elementary substance belonging to Group 13 or the compound containing the element is an elemental boron or a boron-containing compound of Formula
   B i H j   Formula (5)
   
       (where i is an integer of 1 to 10, and j is an integer of 0 to 12). 
     
     
         11 . The production method according to  claim 6 , wherein the elementary substance belonging to Group 15 or the compound containing the element is an elemental phosphorus or a phosphorus-containing compound of Formula (6):
   P w X u   Formula (6)
   
       (where w is an integer of 1 to 10, u is an integer of 0 to 12, and X is a hydrogen atom or a monovalent organic group), an elemental arsenic, an arsenic-containing compound, a nitrogen molecule, or a nitrogen-containing compound. 
     
     
         12 . The production method according to  claim 1 , wherein the gas introduced into the electric discharge tube or between the flat plate electrodes is at least one type of gas selected from the group consisting of helium, neon, argon, krypton, xenon, nitrogen molecules, oxygen molecules, hydrogen molecules, carbon dioxide, nitric oxide, nitrogen dioxide, ammonia, halogen molecules, hydrogen halides, sulfur dioxide, hydrogen sulfide, and water vapor. 
     
     
         13 . The production method according to  claim 1 , wherein the gas introduced into the electric discharge tube or between the flat plate electrodes is helium gas alone or a mixed gas of helium with at least one type of gas selected from the group consisting of hydrogen molecules, oxygen molecules, nitrogen molecules, carbon dioxide, carbon monoxide, fluorine molecules, and chlorine molecules. 
     
     
         14 . The production method according to  claim 1 , wherein the two flat plate electrodes formed of a metal or an insulator are disposed facing each other, one of the electrodes is connected to a high-voltage electrode, the other is not connected to an earth lead for air discharge or is connected to a grounding electrode, and a gas is passed through between the electrodes so as to convert molecules present between the electrodes into a plasma. 
     
     
         15 . The production method according to  claim 1 , wherein the two flat plate electrodes formed of a metal or an insulator are in a decompressed container, the introduction gas is passed after decompression, and a high voltage is applied at a low gas pressure and a low frequency so as to convert molecules present between the electrodes into a plasma. 
     
     
         16 . The production method according to  claim 1 , wherein the electric discharge tube formed of a metal tube or each of the flat plate electrodes formed of a metal is formed of an elementary substance belonging to Group 4 to Group 14 or a mixture containing the elementary substance. 
     
     
         17 . The production method according to  claim 1 , wherein the electric discharge tube formed of an insulator tube or each of the flat plate electrodes formed of an insulator is formed of a synthetic polymer, a natural polymer, glass, or ceramic. 
     
     
         18 . The production method according to  claim 1 , wherein a power supply used for plasma generation has a frequency of 10 Hz to 100 MHz and an output voltage of 1,000 V to 30,000 V and the plasma is applied at a low temperature.