Light emitting device and method of fabricating the same

Abstract

Provided are a light emitting device and a method of fabricating the same. The light emitting device comprises: a first conductive semiconductor layer; an active layer comprising an InGaN well layer and a GaN barrier layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The GaN barrier layer comprises an AlGaN layer.

1 . A light emitting device comprising:
 a first conductive semiconductor layer;   an active layer on the first conductive semiconductor layer; and   a second conductive semiconductor layer on the active layer,   wherein the active layer comprises a plurality of structures including an InGaN well layer, a first GaN barrier layer on the InGaN well layer, an AlGaN layer on the first GaN barrier layer, and a second GaN barrier layer on the AlGaN layer, and   wherein the second GaN barrier layer has less pits than the first GaN barrier layer thereof.   
     
     
         2 . The light emitting device according to  claim 1 , wherein the AlGaN layer is directly inter disposed between the first GaN barrier layer and the second GaN barrier layer. 
     
     
         3 . The light emitting device according to  claim 1 , wherein the AlGaN layer is thicker than the first GaN barrier layer. 
     
     
         4 . The light emitting device according to  claim 1 , wherein the AlGaN layer is thicker than the second GaN barrier layer. 
     
     
         5 . The light emitting device according to  claim 1 , wherein the AlGaN layer is thicker than both the first GaN barrier layer and the second GaN barrier layer. 
     
     
         6 . The light emitting device according to  claim 1 , wherein each of the plurality of structures has sequentially and directly stacked the InGaN well layer, the first GaN barrier layer, the AlGaN layer, and the second GaN barrier layer. 
     
     
         7 . The light emitting device according to  claim 1 , wherein the AlGaN layer is formed with a thickness of 5.18 Å to 15.54 Å. 
     
     
         8 . The light emitting device according to  claim 1 , wherein the AlGaN layer has a thickness of one to three mono layers. 
     
     
         9 . The light emitting device according to  claim 1 , wherein the AlGaN layer is expressed as Al x Ga 1-x N (0.1≦×≦0.5). 
     
     
         10 . The light emitting device according to  claim 1 , wherein the AlGaN layer is formed in the GaN barrier layer, and a top and a bottom of the AlGaN layer directly contact the second and first portions of the GaN barrier layer, respectively. 
     
     
         11 . The light emitting device according to  claim 1 , wherein the AlGaN layer is formed by directly contacting the first GaN barrier layer. 
     
     
         12 . The light emitting device according to  claim 1 , wherein the second GaN barrier layer is formed by directly contacting the AlGaN layer.