Nanosensor and method of manufacturing the same

Abstract

A nanosensor comprising a substrate having a hole; a first insulating layer disposed on the substrate and having a first nanopore at a location corresponding to the hole in the substrate; first and second electrodes disposed on the first insulating layer, wherein the first and second electrodes are spaced apart from each other with the first nanopore positioned therebetween; a first electrode pad disposed on at least a portion of the first electrode; a second electrode pad disposed on at least a portion of the second electrode; and a protective layer disposed on at least a portion of the first and second electrode pads; as well as a method for manufacturing same.

1 . A nanosensor comprising:
 a substrate having a hole;   a first insulating layer disposed on the substrate and having a first nanopore at a location corresponding to the hole in the substrate;   first and second electrodes disposed on the first insulating layer, wherein the first and second electrodes are spaced apart from each other with the first nanopore positioned therebetween;   a first electrode pad disposed on at least a portion of the first electrode;   a second electrode pad disposed on at least a portion of the second electrode; and   a protective layer disposed on at least a portion of the first and second electrode pads.   
     
     
         2 . The nanosensor of  claim 1 , wherein the protective layer covers only a portion of each of the first and second electrode pads, and the first and second electrode pads cover only a portion of the first and second electrodes, respectively. 
     
     
         3 . The nanosensor of  claim 1 , further comprising:
 a second insulating layer disposed on the protective layer and having a second nanopore connected to the first nanopore.   
     
     
         4 . The nanosensor of  claim 3 , wherein the second insulating layer covers the protective layer and portions of the first and second electrodes adjacent the nanopore. 
     
     
         5 . The nanosensor of  claim 1 , wherein the first and second electrodes comprise graphene or carbon nanotubes. 
     
     
         6 . The nanosensor of  claim 3 , wherein at least one of the first insulating layer and the second insulating layer comprises a nitride. 
     
     
         7 . The nanosensor of  claim 1 , wherein the protective layer comprises an oxide. 
     
     
         8 . A method of manufacturing a nanosensor, the method comprising:
 forming a first insulating layer on a surface of a substrate;   forming graphene on the first insulating layer;   forming a metal layer on the graphene;   patterning the metal layer and the graphene;   exposing a portion of the graphene by again patterning the metal layer;   forming a protective layer on the exposed portion of the graphene and the metal layer;   removing a portion of the protective layer to expose a portion of the graphene disposed under the protective layer;   forming a hole in the substrate; and   forming a first nanopore in the first insulating layer and the exposed portion of the graphene, wherein the first nanopore is connected to the hole.   
     
     
         9 . The method of  claim 8 , wherein forming graphene on the first insulating layer comprises:
 forming a catalyst layer on the first insulating layer; and   growing graphene on the catalyst layer.   
     
     
         10 . The method of  claim 8 , further comprising, after removing a portion of the protective layer to expose a portion of the graphene:
 forming a second insulating layer on the exposed portion of the graphene and the remaining protective layer.   
     
     
         11 . The method of  claim 10 , further comprising:
 forming a second nanopore in the second insulating layer, wherein the second nanopore is connected to the first nanopore.   
     
     
         12 . The method of  claim 11 , wherein the first nanopore and the second nanopore are formed simultaneously. 
     
     
         13 . The method of  claim 8 , wherein the metal layer and the graphene are patterned into shapes resembling bow ties. 
     
     
         14 . The method of  claim 10 , further comprising:
 exposing an edge portion of the metal layer by etching a portion of the second insulating layer and the protective layer.   
     
     
         15 . The method of  claim 10 , wherein at least one of the first insulating layer, the second insulating layer, and the protective layer is formed by low-pressure chemical vapor deposition (LPCVD). 
     
     
         16 . The method of  claim 10 , wherein at least one of the first insulating layer and the second insulating layer is formed at a temperature of at least 500° C. but not exceeding 1000° C. 
     
     
         17 . The method of  claim 8 , wherein the protective layer is formed at a temperature of at least 300° C. but not exceeding 500° C. 
     
     
         18 . A method of manufacturing a nanosensor, the method comprising:
 forming a first insulating layer on a surface of a substrate;   forming graphene on the first insulating layer;   patterning the graphene;   forming a sacrificial layer on the graphene;   exposing a first portion of the graphene by patterning the sacrificial layer;   forming a second insulating layer on the first portion of the graphene and the sacrificial layer;   forming a photoresist layer on a portion of the second insulating layer and removing a remaining portion of the second insulating layer;   exposing a second portion of the graphene by removing the sacrificial layer;   forming a metal layer on the photoresist layer and the second portion of the graphene;   removing the photoresist layer;   forming a hole in the substrate; and   forming a nanopore in the first insulating layer, the graphene, and the second insulating layer, wherein the nanopore is connected to the hole.   
     
     
         19 . The method of  claim 18 , wherein forming graphene on the first insulating layer comprises transferring graphene grown on an auxiliary substrate from the auxiliary substrate to the first insulating layer. 
     
     
         20 . The method of  claim 18 , wherein the metal layer and the graphene are patterned into shapes resembling bow ties. 
     
     
         21 . The method of  claim 18 , wherein at least one of the first insulating layer and the second insulating layer comprises a nitride. 
     
     
         22 . The method of  claim 18 , wherein the sacrificial layer comprises an oxide. 
     
     
         23 . The method of  claim 18 , wherein at least one of the first insulating layer, the second insulating layer, and the sacrificial layer is formed by low-pressure chemical vapor deposition (LPCVD). 
     
     
         24 . The method of  claim 23 , wherein at least one of the first insulating layer and the second insulating layer is formed at a temperature of at least 500° C. but not exceeding 1000° C. 
     
     
         25 . The method of  claim 23 , wherein the sacrificial layer is formed at a temperature of at least 300° C. but not exceeding 500° C.