Manufacturing method of thin film transistor and thin film transistor, and display

Abstract

A method of making a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.

1 . A method of manufacturing a thin film transistor comprising:
 providing a substrate with a gate insulting film on an organic semiconductor layer;   pattern coating a gate electrode material on the gate insulating film by printing, and   forming a gate electrode by solidifying the pattern coated gate electrode material using a heat treatment to dry pattern coated gate electrode material.   
     
     
         2 . The of  claim 1 , wherein the gate electrode material is screen printed onto the gate insulating film. 
     
     
         3 . The method of  claim 1 , wherein a surface of the gate insulating film coming into contact with the organic semiconductor layer is constituted of a water-repellent material. 
     
     
         4 . The method of  claim 1 , wherein the gate insulating film has a stack structure in which a first insulating layer made of a water-repellent material and a second insulating layer made of a crosslinking high molecular weight material are stacked in this order on the organic semiconductor layer. 
     
     
         5 . The method of  claim 1 , further comprising forming a source electrode or a drain electrode on the substrate or the organic semiconductor layer prior to a step of forming the gate insulating film. 
     
     
         6 . A thin film transistor comprising:
 a substrate;   an organic semiconductor layer on the substrate;   a gate insulating film on the organic semiconductor layer; and   a gate electrode on the gate insulating film,   wherein,   the gate electrode comprises a solidified printed gate electrode material.   
     
     
         7 . A display device comprising:
 A thin film transistor comprising (a) a substrate, (b) an organic semiconductor layer on the substrate, (c) a gate insulating film on the organic semiconductor layer, and (d) a gate electrode on the gate insulating film, the gate electrode comprising a solidified printed gate electrode material; and   a display device connected to the thin film transistor.   
     
     
         8 . The display device of  claim 7 , wherein:
 a source electrode or a drain electrode of the thin film transistor is provided on the substrate or the organic semiconductor layer,   an auxiliary capacity electrode to be formed in the same layer as the gate electrode and an interlayer insulating film to be formed in a state that it covers the auxiliary capacity electrode and the gate electrode are provided on the gate insulating film, and   the drain electrode and the display device are connected to each other by a via penetrating through the interlayer insulating film and the gate insulating film.   
     
     
         9 . The display device of  claim 7 , wherein:
 an auxiliary capacity electrode and an auxiliary capacity insulating film in a state that it covers the auxiliary capacity electrode are provided on the substrate,   a source electrode or a drain electrode of the thin film transistor is provided on the auxiliary capacity insulating film or the organic semiconductor layer, and   a pixel electrode of the display device is configured in a state that it is connected to the drain electrode in the same layer.