US2012326952A1PendingUtilityA1

Display apparatus, method of manufacturing display apparatus, and electronic apparatus

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Assignee: OMOTO KEISUKEPriority: Mar 30, 2010Filed: Jul 3, 2012Published: Dec 27, 2012
Est. expiryMar 30, 2030(~3.7 yrs left)· nominal 20-yr term from priority
Inventors:Keisuke Omoto
G09G 2300/0819G09G 3/325G09G 2320/045G09G 2300/0852H10D 30/6717H10D 86/60H10D 86/40H10K 59/1213
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Claims

Abstract

A display apparatus includes a plurality of pixels each including an electro-optic element, a writing transistor writing a video signal into the pixel, a holding capacitor holding the video signal written by the writing transistor, and a driving transistor driving the electro-optic element based on the video signal held in the holding capacitor. The driving transistor includes a channel region, a gate electrode disposed opposite to the channel region, a first source/drain region closer to a power source, a second source/drain region closer to the electro-optic element, and impurity regions disposed between the channel region and the first and second source/drain regions and having a lower concentration than that of the corresponding source/drain region. The impurity region disposed between the channel region and the first source/drain region is formed in a region other than a region facing the gate electrode.

Claims

exact text as granted — not AI-modified
1 . A display apparatus comprising:
 a plurality of pixels each including an electro-optic element, a writing transistor writing a video signal into the pixel, a holding capacitor holding the video signal written by the writing transistor, and a driving transistor driving the electro-optic element based on the video signal held in the holding capacitor,   wherein the driving transistor includes
 a channel region, 
 a gate electrode disposed opposite to the channel region, 
 a first source/drain region closer to a power source, 
 a second source/drain region closer to the electro-optic element, and 
 impurity regions disposed between the channel region and the first and second source/drain regions and having a lower concentration than that of the corresponding source/drain region, and 
   wherein the impurity region disposed between the channel region and the first source/drain region is formed in a region other than a region facing the gate electrode.   
     
     
         2 . The display apparatus according to  claim 1 , wherein a part of the impurity region disposed between the channel region and the second source/drain region is formed in a region facing the gate electrode. 
     
     
         3 . The display apparatus according to  claim 1  or  2 , wherein the driving transistor is a bottom gate type transistor in which the gate electrode is disposed closer to a substrate than the channel region. 
     
     
         4 . The display apparatus according to  claim 3 ,
 wherein there is a parasitic capacitance between the gate electrode and the impurity region disposed between the channel region and the second source/drain region, and   wherein a capacitance value of the parasitic capacitance is one of parameters used to determine a gain in a bootstrap operation in which a gate potential is varied on the track of a source potential of the driving transistor when the writing transistor is in a non-conductive state.   
     
     
         5 . The display apparatus according to  claim 4 , wherein the source potential of the driving transistor is varied according to a current flowing in the driving transistor. 
     
     
         6 . A method of manufacturing a display apparatus which includes a plurality of pixels each including an electro-optic element, a writing transistor writing a video signal into the pixel, a holding capacitor holding the video signal written by the writing transistor, and a driving transistor driving the electro-optic element based on the video signal held in the holding capacitor, the method comprising the steps of: when forming the driving transistor,
 forming a gate electrode and a semiconductor layer on a substrate and forming a photoresist in a displaced state with respect to a center of the gate electrode; and then   forming an impurity region between a source/drain region closer to a power source and a channel region by performing patterning by exposure from a surface of the substrate using the photoresist as a mask, and then implanting impurities.   
     
     
         7 . An electronic apparatus comprising:
 a display apparatus including a plurality of pixels each including an electro-optic element, a writing transistor writing a video signal into the pixel, a holding capacitor holding the video signal written by the writing transistor, and a driving transistor driving the electro-optic element based on the video signal held in the holding capacitor,   wherein the driving transistor includes
 a channel region, 
 a gate electrode disposed opposite to the channel region, 
 a first source/drain region closer to a power source, 
 a second source/drain region closer to the electro-optic element, and 
 impurity regions disposed between the channel region and the first and second source/drain regions and having a lower concentration than that of the corresponding source/drain region, and 
   wherein the impurity region disposed between the channel region and the first source/drain region is formed in a region other than a region facing the gate electrode.

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