Interaction structure for a storage medium

Abstract

A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing a conductive portion having a deposition thickness substantially matching the sub-lithographic dimension on the side wall; and then defining the conductive portion. The sub-lithographic dimension preferably is between 1 and 50 nm, more preferably 20 nm.

1 . A transducer for interacting with a storage medium, comprising:
 a first interaction head configured to exchange signals with the storage medium, the first interaction head including:
 a planar first conductive region having a sub-lithographic first dimension in a first direction, and larger second and third dimensions in second and third directions, respectively, that are mutually orthogonal to the first direction; and 
 first and second insulating portions positioned on opposite sides of the first conductive region, the opposite sides being separated from each other by the first dimension of the first conductive region. 
   
     
     
         2 . The transducer according to  claim 1 , wherein said sub-lithographic first dimension is between 1 and 50 nm. 
     
     
         3 . The transducer according to  claim 1 , further comprising:
 a support element having a surface on which the first interaction head is supported; and   a first conductive path electrically coupled to the first conductive region and extending longitudinally on the surface of the support element.   
     
     
         4 . The transducer according to  claim 3 , wherein the first conductive path and the first conductive region are contiguous parts of a unitary conductive layer and the first conductive path extends between the first insulating portion and the surface of the support element. 
     
     
         5 . The transducer according to  claim 1 , wherein the first conductive region has a rectangular shape in a plane that extends in the second and third directions. 
     
     
         6 . The transducer according to  claim 1 , further comprising:
 a support element having a surface on which the first interaction head is supported; and   a second interaction head supported on the surface of the support element, the second interaction head having a planar second conductive region having a sub-lithographic dimension, and third and fourth insulating portions positioned on opposite sides of the second conductive region, the opposite sides of the second conductive region being separated from each other by the sub-lithographic dimension of the second conductive region.   
     
     
         7 . The transducer according to  claim 6 , wherein said first and second interaction heads are aligned in the second direction. 
     
     
         8 . The transducer according to  claim 6 , further comprising:
 a first conductive path electrically coupled to the first conductive region and extending longitudinally on the surface of the support element; and   a second conductive path electrically coupled to the second conductive region and extending longitudinally on the surface of the support element.   
     
     
         9 . The transducer according to  claim 8 , wherein the second conductive path and the second conductive region are contiguous parts of a unitary conductive layer and the second conductive path extends between the third insulating portion and the surface of the support element. 
     
     
         10 . A storage device, comprising:
 a storage medium; and   a transducer positioned above the storage medium, the transducer including:
 a first interaction head configured to exchange signals with the storage medium, the first interaction head including:
 a planar first conductive region having a sub-lithographic first dimension in a first direction, and larger second and third dimensions in second and third directions, respectively, that are mutually orthogonal to the first direction; and 
 first and second insulating portions positioned on opposite sides of the first conductive region, the opposite sides being separated from each other by the first dimension of the first conductive region. 
 
   
     
     
         11 . The storage device according to  claim 10 , wherein said sub-lithographic first dimension is between 1 and 50 nm. 
     
     
         12 . The storage device according to  claim 10 , wherein the transducer includes:
 a support element having a surface on which the first interaction head is supported; and   a first conductive path electrically coupled to the first conductive region and extending longitudinally on the surface of the support element.   
     
     
         13 . The storage device according to  claim 12 , wherein the first conductive path and the first conductive region are contiguous parts of a unitary conductive layer and the first conductive path extends between the first insulating portion and the surface of the support element. 
     
     
         14 . The storage device according to  claim 10 , wherein the first conductive region has a rectangular shape in a plane that extends in the second and third directions. 
     
     
         15 . The storage device according to  claim 10 , wherein the transducer includes:
 a support element having a surface on which the first interaction head is supported; and   a second interaction head supported on the surface of the support element, the second interaction head having a planar second conductive region having a sub-lithographic dimension, and third and fourth insulating portions positioned on opposite sides of the second conductive region, the opposite sides of the second conductive region being separated from each other by the sub-lithographic dimension of the second conductive region.   
     
     
         16 . The storage device according to  claim 10 , wherein said first and second interaction heads are aligned in the second direction. 
     
     
         17 . The storage device according to  claim 15 , wherein the transducer includes:
 a first conductive path electrically coupled to the first conductive region and extending longitudinally on the surface of the support element; and   a second conductive path electrically coupled to the second conductive region and extending longitudinally on the surface of the support element.   
     
     
         18 . The storage device according to  claim 10 , wherein the second conductive path and the second conductive region are contiguous parts of a unitary conductive layer and the second conductive path extends between the third insulating portion and the surface of the support element. 
     
     
         19 . A transducer for interacting with a storage medium, comprising:
 a support element having a surface;   a first interaction head positioned on the surface of the support element and configured to exchange signals with the storage medium, the first interaction head including:
 a planar first conductive region having a sub-lithographic first dimension in a first direction; and 
 first and second insulating portions positioned on opposite sides of the first conductive region, the opposite sides being separated from each other by the first dimension of the first conductive region; and 
   a first conductive path electrically coupled to the first conductive region and extending between the surface of the support element and the first insulating portion.   
     
     
         20 . The transducer according to  claim 19 , wherein said sub-lithographic first dimension is between 1 and 50 nm. 
     
     
         21 . The transducer according to  claim 19 , wherein the first conductive path and the first conductive region are contiguous parts of a unitary conductive layer and the first conductive path extends longitudinally on the surface of the support element. 
     
     
         22 . The transducer according to  claim 19 , further comprising:
 a second interaction head supported on the surface of the support element, the second interaction head having a planar second conductive region having a sub-lithographic dimension, and third and fourth insulating portions positioned on opposite sides of the second conductive region, the opposite sides of the second conductive region being separated from each other by the sub-lithographic dimension of the second conductive region.   
     
     
         23 . The transducer according to  claim 22 , further comprising:
 a second conductive path electrically coupled to the second conductive region, extending between the third insulating portion and the surface of the support element, and being spaced apart from the first conductive path.