Organic thin film transistor, production method thereof, and electronic device

Abstract

An organic thin film transistor including a substrate with an organic insulating layer; a source and drain electrode layer electro deposited on the substrate; a second metal material source and drain electrode layer covering the first layer, the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer; and an organic semiconductor layer over a region between the source electrode and the drain electrode

1 . A method of producing an organic thin film transistor; comprising the steps of:
 depositing a metal material film on an organic insulating layer by an electroless plating method;   depositing a first layer on the organic insulating layer using a plating technique, the first layer forming a source electrode and a drain electrode;   depositing a second layer of a metal material on an exposed surface of the first layer using a further plating technique, the second layer forming the source electrode and the drain electrode with the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer so as to form the source electrode and the drain electrode using the first layer and the second layer; and   forming an organic semiconductor layer over a region between the source electrode and the drain electrode.   
     
     
         2 . The method of producing an organic thin film transistor according to  claim 2 , wherein
 the metal material for forming the first layer is at least one of nickel (Hi) and cupper (Cu), and wherein   the metal material for forming the second layer is at least one of gold (Au), platinum (Pt), and the palladium (Pd).   
     
     
         3 . The method of producing an organic thin film transistor according to  claim 1  or  2 , wherein
 in the step of depositing the second layer of a metal material on an exposed surface of the first layer using a further plating technique, the second layer is formed using one of a displacement plating method and an electroless plating method, the displacement plating method being for displacing an exposed surface of the first layer. 
 
     
     
         4 . The method of producing an organic thin film transistor according to  claim 3 , comprising depositing a gate electrode on the organic semiconductor layer with a gate insulating film therebetween.