Semiconductor device and method for fabricating the same

Abstract

A semiconductor device and a method for fabricating a semiconductor device are provided. The method for fabricating a semiconductor device includes forming an isolation layer over a semiconductor substrate defining first and second regions, etching the isolation layer at an edge of the first region to form a guard ring pattern, forming a buried guard ring filling the guard ring pattern, selectively etching the isolation layer of the first region to form a plurality of patterns, forming a plurality of conductive patterns in the respective patterns, and completely removing the isolation layer of the first region through a dip-out process.

1 . A semiconductor device, comprising:
 a semiconductor substrate defining a cell region and a peripheral circuit region;   a plurality of storage nodes formed over the semiconductor substrate in the cell region; and   a buried guard ring surrounding the cell region.   
     
     
         2 . The semiconductor device of  claim 1 , further comprising a floating layer comprising a portion serving as the buried guard ring and supporting upper side walls of the storage nodes. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the floating layer comprises a plurality of openings each of which opens a space among the neighboring storage nodes. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the buried guard ring comprises an insulation layer. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the buried guard ring comprises a nitride layer. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the storage nodes comprise cylinder-type storage nodes or pillar-type storage nodes. 
     
     
         7 - 23 . (canceled)