Deposition apparatus and method for manufacturing film by using deposition apparatus
Abstract
A vapor deposition device including an evaporation source for evaporating a vapor-depositing material; a transportation section including first and second rolls for holding the substrate in the state of being wound therearound and a guide section for guiding the substrate; and a shielding section, located in a vapor deposition possible zone, for forming a shielded zone which is not reachable by the vapor-depositing material from the evaporation source. Vapor deposition zones include a planar transportation zone for transporting the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is planar; and the transportation section is located with respect to the evaporation source such that the vapor-depositing material is not incident on the substrate in a direction of the normal to the substrate in the vapor deposition possible zone excluding the shielded zone.
Claims
exact text as granted — not AI-modified1 - 36 . (canceled)
37 . A vapor deposition device for moving a sheet-like substrate in a roll-to-roll system in a chamber to continuously form a vapor deposition film on the substrate, the vapor deposition device comprising:
an evaporation source for evaporating a vapor-depositing material; a transportation section including first and second rolls for holding the substrate in the state of being wound therearound and a guide section for guiding the substrate, wherein one of the first and second rolls supplies the substrate, the guide section guides the supplied substrate, and the other of the first and second rolls takes up the substrate, and thus the substrate is transported so as to pass through a vapor deposition possible zone to which the evaporated vapor-depositing material reaches; and a shielding section, located in the vapor deposition possible zone, for forming a shielded zone which is not reachable by the vapor-depositing material from the evaporation source; wherein: the guide section includes a first guide member for guiding the substrate in the vapor deposition possible zone such that a surface of the substrate to be subjected to the vapor-depositing material is convexed toward the evaporation source, and a second guide member, located on the second roll side with respect to the first guide member on a substrate transportation path, for guiding the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is convexed toward the evaporation source; the shielding section includes first and second shielding members respectively located between the first and second guide members and the evaporation source; the first guide member forms a first vapor deposition zone located on the first roll side with respect to the first shielding member on the substrate transportation path, and a second vapor deposition zone located on the second roll side with respect to the first shielding member on the substrate transportation path; the second guide member forms a third vapor deposition zone located on the first roll side with respect to the second shielding member on the substrate transportation path, and a fourth vapor deposition zone located on the second roll side with respect to the second shielding member on the substrate transportation path; the first through fourth vapor deposition zones include a planar transportation zone for transporting the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is planar; and the transportation section is located with respect to the evaporation source such that the vapor-depositing material is not incident on the substrate in a direction of the normal to the substrate in the vapor deposition possible zone excluding the shielded zone.
38 . The vapor deposition device of claim 37 , wherein the guide section includes an inversion structure, provided between the second vapor deposition zone and the third vapor deposition zone on the substrate transportation path, for inverting the surface of the substrate to be subjected to the vapor-depositing material.
39 . The vapor deposition device of claim 37 , wherein in a cross-section which is vertical to the surface of the substrate and includes a transportation direction of the substrate, the first guide member and the second guide member are located on both sides of the normal passing through the center of the evaporation source, and the transportation section is located with respect to the evaporation source such that any one of the first through fourth vapor deposition zones crosses the normal passing through the center of the evaporation source.
40 . The vapor deposition device of claim 37 , wherein a ratio of film formation amounts in the first, second, third and fourth vapor deposition zones is 1:2:2:1.
41 . The vapor deposition device of claim 38 , further comprising first and second heating sections for heating the substrate to 200° C. to 400° C.,
wherein the first heating section is located on the first roll side with respect to the first vapor deposition zone on the substrate transportation path, and the second heating section is located between the second vapor deposition zone and the third vapor deposition zone on the substrate transportation path.
42 . The vapor deposition device of claim 38 , further comprising first, second, third and fourth heating sections for heating the substrate to 200° C. to 400° C.,
wherein the first, second, third and fourth heating sections are respectively located in the vicinity of top ends of the first, second, third and fourth vapor deposition zones.
43 . The vapor deposition device of claim 37 , wherein:
the guide section further includes in the vapor deposition possible zone:
a third guide member, located on the second roll side with respect to the second guide member on the substrate transportation path, for guiding the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is convexed toward the evaporation source; and
a fourth guide member, located on the second roll side with respect to the third guide member on the substrate transportation path, for guiding the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is convexed toward the evaporation source;
the shielding section further includes a third shielding member and a fourth shielding member respectively located between the third and fourth guide members and the evaporation source; the third guide member forms a fifth vapor deposition zone located on the first roll side with respect to the third shielding member on the substrate transportation path, and a sixth vapor deposition zone located on the second roll side with respect to the third shielding member on the substrate transportation path; and the fourth guide member forms a seventh vapor deposition zone located on the first roll side with respect to the fourth shielding member on the substrate transportation path, and an eighth vapor deposition zone located on the second roll side with respect to the fourth shielding member on the substrate transportation path.
44 . The vapor deposition device of claim 43 , wherein the guide section includes an inversion structure, provided between the fourth vapor deposition zone and the fifth vapor deposition zone on the substrate transportation path, for inverting the surface of the substrate to be subjected to the vapor-depositing material.
45 . The vapor deposition device of claim 43 , wherein in a cross-section which is vertical to the surface of the substrate and includes a transportation direction of the substrate, the first and second guide members, and the third and fourth guide members, are located on both sides of the normal passing through the center of the evaporation source, and the transportation section is located with respect to the evaporation source such that one of the first through eighth vapor deposition zones crosses the normal passing through the center of the evaporation source.
46 . The vapor deposition device of claim 43 , wherein a ratio of film formation amounts in the first, second, third, fourth, fifth, sixth, seventh and eighth vapor deposition zones is 1:2:2:1:1:2:2:1.
47 . The vapor deposition device of claim 44 , further comprising first and second heating sections for heating the substrate to 200° C. to 400° C.,
wherein the first heating section is located on the first roll side with respect to the first vapor deposition zone on the substrate transportation path, and the second heating section is located so as to heat the substrate between the fourth vapor deposition zone and the fifth vapor deposition zone on the substrate transportation path.
48 . The vapor deposition device of claim 44 , further comprising first, second, third and fourth heating sections for heating the substrate to 200° C. to 400° C.,
wherein the first, second, third and fourth heating sections are respectively located in the vicinity of top ends of the first, fourth, fifth and eighth vapor deposition zones.
49 . The vapor deposition device of claim 43 , wherein:
the guide section further includes in the vapor deposition possible zone:
a fifth guide member, located on to the second roll side with respect to the fourth guide member on the substrate transportation path, for guiding the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is convexed toward the evaporation source; and
a sixth guide member, located on the second roll side with respect to the fifth guide member on the substrate transportation path, for guiding the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is convexed toward the evaporation source;
the shielding section further includes a fifth shielding member and a sixth shielding member respectively located between the fifth and sixth guide members and the evaporation source; the fifth guide member forms a ninth vapor deposition zone located on the first roll side with respect to the fifth shielding member on the substrate transportation path, and a tenth vapor deposition zone located on the second roll side with respect to the fifth shielding member on the substrate transportation path; and the sixth guide member forms an eleventh vapor deposition zone located on the first roll side with respect to the sixth shielding member on the substrate transportation path, and a twelfth vapor deposition zone located on the second roll side with respect to the sixth shielding member on the substrate transportation path.
50 . The vapor deposition device of claim 49 , wherein the guide section includes an inversion structure, provided between the sixth vapor deposition zone and the seventh vapor deposition zone on the substrate transportation path, for inverting the surface of the substrate to be subjected to the vapor-depositing material.
51 . The vapor deposition device of claim 49 , wherein in a cross-section which is vertical to the surface of the substrate and includes a transportation direction of the substrate, the first through third guide members and the fourth through sixth guide members are located on both sides of the normal passing through the center of the evaporation source, and the transportation section is located with respect to the evaporation source such that one of the first through twelfth vapor deposition zones crosses the normal passing through the center of the evaporation source.
52 . The vapor deposition device of claim 50 , wherein a ratio of film formation amounts in the first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, eleventh and twelfth vapor deposition zones is 1:2:2:2:2:1:1:2:2:2:2:1.
53 . The vapor deposition device of claim 37 , wherein in a cross-section which is vertical to the surface of the substrate and includes a transportation direction of the substrate, the transportation section is located with respect to the evaporation source such that a line connecting an arbitrary point on the substrate passing through each vapor deposition zone and the center of the vapor deposition source makes an angle of 45° or greater and 75° or smaller with the direction of the normal to the substrate.
54 . The vapor deposition device of claim 37 , wherein at least one of the first through fourth vapor deposition zones includes a curved transportation zone for transporting the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is curved.
55 . The vapor deposition device of claim 54 , wherein:
the at least one of the first through fourth guide members is located in the vapor deposition possible zone; and the curved transportation zone includes a bottom end curved transportation zone for transporting the substrate along a part of the at least one guide member which is located in the vapor deposition possible zone.
56 . The vapor deposition device of claim 55 , further comprising an inclination direction switching roller, provided in the at least one vapor deposition zone, for forming two planar transportation zones having different angles with respect to the normal passing through the center of the evaporation source,
wherein the curved transportation zone includes an intermediate transportation zone for transporting the substrate along the inclination direction switching roller.
57 . The vapor deposition device of claim 37 , wherein the shielding members further include at least one shielding plate having a wall, and a surface of the wall faces the surface of the substrate, to be subjected to the vapor-depositing material, passing through any of the first through fourth vapor deposition zones.
58 . The vapor deposition device of claim 57 , wherein the surface of the wall is located in the vapor deposition possible zone, and a distance between the any vapor deposition zone and the surface of the wall increases as being closer to the evaporation source.
59 . The vapor deposition device of claim 57 , further comprising a nozzle section, provided in the vicinity of each of the guide members in the vapor deposition possible zone, for supplying gas to the two vapor deposition zones formed by each of the guide members, wherein the wall causes the gas emitted from the nozzle section to reside in the any vapor deposition zone.
60 . The vapor deposition device of claim 57 , wherein the surface of the wall alleviates a temperature difference caused to the surface by being subjected to the vapor-depositing material in the any vapor deposition zone.
61 . The vapor deposition device of claim 43 , wherein the shielding members further include at least one shielding plate having a wall, and the surface of the wall faces the surface of the substrate, to be subjected to the vapor-depositing material, passing through any of the first through eighth vapor deposition zones.
62 . The vapor deposition device of claim 61 , wherein the surface of the wall is located in the vapor deposition possible zone, and a distance between the any vapor deposition zone and the surface of the wall increases as being closer to the evaporation source.
63 . The vapor deposition device of claim 61 , further comprising a nozzle section, provided in the vicinity of each of the guide members in the vapor deposition possible zone, for supplying gas to the two vapor deposition zones formed by each of the guide members, wherein the wall causes the gas emitted from the nozzle section to reside in the any vapor deposition zone.
64 . The vapor deposition device of claim 61 , wherein the surface of the wall alleviates a temperature difference caused to the surface by being subjected to the vapor-depositing material in the any vapor deposition zone.
65 . The vapor deposition device of claim 49 , wherein the shielding members further include at least one shielding plate having a wall, and the surface of the wall faces the surface of the substrate, to be subjected to the vapor-depositing material, passing through any of the first through twelfth vapor deposition zones.
66 . The vapor deposition device of claim 65 , wherein the surface of the wall is located in the vapor deposition possible zone, and a distance between the any vapor deposition zone and the surface of the wall increases as being closer to the evaporation source.
67 . The vapor deposition device of claim 65 , further comprising a nozzle section, provided in the vicinity of each of the guide members in the vapor deposition possible zone, for supplying gas to the two vapor deposition zones formed by each of the guide members, wherein the wall causes the gas emitted from the nozzle section to reside in the any vapor deposition zone.
68 . The vapor deposition device of claim 65 , wherein the surface of the wall alleviates a temperature difference caused to the surface by being subjected to the vapor-depositing material in the any vapor deposition zone.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.