Use of freestanding nitride veneers in semiconductor devices

Abstract

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

1 . A flexible single crystal nitride veneer with a thickness between 20 and 150 microns. 
     
     
         2 . A flexible single crystal nitride veneer growth substrate with at least one semiconductor layer grown on at least one side of said flexible single crystal nitride veneer. 
     
     
         3 . The flexible single crystal nitride veneer growth substrate with at least one semiconductor layer from  claim 2  consisting of at least one of the following materials but not limited to silicon, silicon/germanium, germanium, gallium arsenide, alingap, dilute nitrides, InP, antinomides , and ZnO alloys. 
     
     
         4 . The flexible single crystal nitride veneer growth substrate with at least one semiconductor layer from  claim 2  wherein said semiconductor layer is deposited on said flexible single crystal nitride veneer using at least one of the following methods but not limited to; sputtering, LPE, MBE, MOCVD, HVPE, ALD, evaporation, spraying, dip coating, printing, and/or spin coating. 
     
     
         5 . The flexible single crystal nitride veneer growth substrate with at least one semiconductor layer from  claim 2  wherein said semiconductor layer is nitride solar cell junction. 
     
     
         6 . A semiconductor device containing at least one flexible nitride veneer consisting of at least one of the following devices; laser diode, HEMT, solid state pumped laser diode, solar cell, LED, or bio sensor.