US2013022744A1PendingUtilityA1

Method of forming noble metal layer using ozone reaction gas

Assignee: HYNIX SEMICONDUCTOR INCPriority: Apr 21, 2008Filed: Sep 12, 2012Published: Jan 24, 2013
Est. expiryApr 21, 2028(~1.7 yrs left)· nominal 20-yr term from priority
H10P 14/43H10W 20/054H10W 20/046H10W 20/043H10W 20/035H10W 20/033H10P 14/432H10D 1/694C23C 16/18C23C 16/045C23C 16/44C23C 16/45525H10B 53/00
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Claims

Abstract

A noble metal layer is formed using ozone (O 3 ) as a reaction gas.

Claims

exact text as granted — not AI-modified
1 . A method of forming a noble metal layer, comprising:
 using ozone (O 3 ) as a reaction gas at a concentration level ranging from approximately 50 g/m 3  to approximately 300 g/m 3  and at a substrate temperature ranging from approximately 150° C. to approximately 275° C.   
     
     
         2 . The method of  claim 1 , wherein forming the noble metal layer comprises controlling the ozone concentration level and the substrate temperature in accordance with an inverse proportional relationship. 
     
     
         3 . The method of  claim 2 , wherein controlling the ozone concentration level comprises:
 in response to one of the ozone concentration level and substrate temperature being at a level sufficiently high so as to adversely affect a surface roughness of the noble metal layer being formed, reducing the other of the ozone concentration level and substrate temperature to a level sufficiently low so as to maintain the surface roughness of the noble metal layer being formed at a predetermined level.

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