US2013037755A1PendingUtilityA1

Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies

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Individually held — no corporate assignee on recordPriority: Aug 12, 2010Filed: Sep 15, 2012Published: Feb 14, 2013
Est. expiryAug 12, 2030(~4.1 yrs left)· nominal 20-yr term from priority
Inventors:Stanford R. Ovshinsky
H10P 14/3454H10P 14/3411H10P 14/24H01J 37/32192H10F 77/1668H10F 77/1433H10F 71/121H10F 71/103H10F 71/10H01J 37/32357Y02E10/547H01J 37/32229H01J 37/3244Y02P70/50H01J 2237/3326
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Claims

Abstract

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits that carry deposition species. The applicator transfers microwave energy to the deposition species to energize them to a reactive state. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer and deliver the microwave-excited species to a deposition chamber. Supplemental material streams may be delivered to the deposition chamber without passing through the microwave applicator and may combine with deposition species exiting the conduits to form a thin film material. Precursors for the microwave-excited deposition species include fluorinated forms of silicon. Precursors for supplemental material streams include hydrogenated forms of silicon.

Claims

exact text as granted — not AI-modified
1 . A photovoltaic material comprising silicon, fluorine, and hydrogen, said fluorine having an atomic concentration between 0.1% and 7%, said hydrogen having an atomic concentration between 1% and 8%. 
     
     
         2 . The photovoltaic material of  claim 1 , wherein the atomic concentration of fluorine is between 0.2% and 5% and the atomic concentration of hydrogen is between 2% and 6%. 
     
     
         3 . The photovoltaic material of  claim 1 , wherein the atomic concentration of fluorine is between 0.5% and 4% and the atomic concentration of hydrogen is between 3% and 5%. 
     
     
         4 . The photovoltaic material of  claim 1 , wherein said material has a first sub-bandgap absorption coefficient in the as-deposited state and wherein the sub-bandgap absorption coefficient of said material increases by less than 60% of said first sub-bandgap absorption coefficient upon exposure of said material to AM1.5 solar radiation for 44 hours. 
     
     
         5 . The photovoltaic material of  claim 4 , wherein said the sub-bandgap absorption coefficient of said material increases by less than 40% of said first sub-bandgap absorption coefficient upon exposure of said material to AM1.5 solar radiation for 44 hours. 
     
     
         6 . The photovoltaic material of  claim 4 , wherein said the sub-bandgap absorption coefficient of said material increases by less than 20% of said first sub-bandgap absorption coefficient upon exposure of said material to AM1.5 solar radiation for 44 hours. 
     
     
         7 . The photovoltaic material of  claim 1 , wherein said material has a first sub-bandgap absorption coefficient in the as-deposited state and wherein the sub-bandgap absorption coefficient of said material increases by less than 70% of said first sub-bandgap absorption coefficient upon exposure of said material to AM1.5 solar radiation for 115 hours. 
     
     
         8 . The photovoltaic material of  claim 7 , wherein said the sub-bandgap absorption coefficient of said material increases by less than 45% of said first sub-bandgap absorption coefficient upon exposure of said material to AM1.5 solar radiation for 115 hours. 
     
     
         9 . The photovoltaic material of  claim 7 , wherein said the sub-bandgap absorption coefficient of said material increases by less than 30% of said first sub-bandgap absorption coefficient upon exposure of said material to AM1.5 solar radiation for 115 hours. 
     
     
         10 . The photovoltaic material of  claim 1 , wherein said material has a first μτ product in the as-deposited state and wherein the μτ product of said material decreases by less than 20% of said first μτ product upon exposure of said material to AM1.5 solar radiation for 44 hours. 
     
     
         11 . The photovoltaic material of  claim 10 , wherein the μτ product of said material decreases by less than 10% of said first μτ product upon exposure of said material to AM1.5 solar radiation for 44 hours. 
     
     
         12 . The photovoltaic material of  claim 10 , wherein the μτ product of said material decreases by less than 5% of said first μτ product upon exposure of said material to AM1.5 solar radiation for 44 hours. 
     
     
         13 . The photovoltaic material of  claim 10 , wherein said material has a first μτ product in the as-deposited state and wherein the μτ product of said material decreases by less than 40% of said first μτ product upon exposure of said material to AM1.5 solar radiation for 115 hours. 
     
     
         14 . The photovoltaic material of  claim 13 , wherein the μτ product of said material decreases by less than 30% of said first μτ product upon exposure of said material to AM1.5 solar radiation for 115 hours.

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