Apparatus and method for conformal mask manufacturing

Abstract

A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.

1 . A method for processing comprising:
 providing a workpiece comprising a particle beam patternable layer that is configured to be first removed through interaction with a particle beam and a transfer layer thereunder; and   exposing regions of the particle beam patternable layer using a focused particle beam thereby removing said regions;   wherein the first transfer layer is configured to be selectively processed relative to the particle beam patternable layer; and   removing the transfer layer using a second removal process which selectively removes regions of the transfer layer, wherein a shape of the second removal is substantially determined by a shape created by the regions removed by an earlier exposure.   
     
     
         2 . The method of  claim 1 , wherein the first exposing step is achieved through ion milling, sputtering the particle beam, chemically assisted etching by the particle beam, or reactive ion etching of the particle beam patterned layer. 
     
     
         3 . The method of  claim 2 , wherein said first transfer layer is between said particle beam patternable layer and said second transfer layer. 
     
     
         4 . The method of  claim 2 , wherein the first transfer layer is configured to be selectively processed relative to the second transfer layer using said first removal process. 
     
     
         5 . The method of  claim 2 , wherein the second transfer layer thickness is between 75% and 50% of the minimum patternable feature size width. 
     
     
         6 . The method of  claim 2 , wherein the first transfer layer is a conductive material. 
     
     
         7 . The method of  claim 2 , wherein the first transfer layer is deposited by atomic layer deposition full cycle. 
     
     
         8 . The method of  claim 2 , wherein the first transfer layer is deposited by atomic layer deposition half cycle. 
     
     
         9 . The method of  claim 2 , wherein the first transfer layer is deposited by atomic layer deposition multiple cycle. 
     
     
         10 . The method of  claim 2 , wherein the first transfer layer is Aluminum. 
     
     
         11 . The method of  claim 2 , wherein the first transfer layer is Aluminum composite. 
     
     
         12 . The method of  claim 2 , wherein the first transfer layer comprises a conductively doped semiconductor or metalloid. 
     
     
         13 . The method of  claim 10 , wherein the first transfer layer comprises conductively doped silicon. 
     
     
         14 . The method of  claim 10 , wherein the first transfer layer comprises conductively photo resist.