Method of manufacturing a photovoltaic device

Abstract

A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.

1 .- 31 . (canceled) 
     
     
         32 . A method for manufacturing a photovoltaic device, comprising:
 forming a lower first conductive layer and a lower second conductive layer on a substrate;   forming a light absorption layer on the lower first conductive layer and the lower second conductive layer;   forming an upper first conductive layer and an upper second conductive layer on the light absorption layer;   forming an upper electrode on the upper first conductive layer and the upper second conductive layer; and   patterning the upper electrode layer, the upper first conductive layer, the upper second conductive layer, and the light absorption layer to form a first cell and a second cell thereby forming a pair of cells connected by the upper electrode layer.   
     
     
         33 . The method of  32 , further comprising
 forming a lower electrode on the substrate before forming the lower first conductive layer and the lower second conductive layer on the substrate.   
     
     
         34 . The method of  claim 33 , wherein
 the pair of cells comprising the first cell and the second cell are connected by the lower electrode.   
     
     
         35 . The method of  claim 34 , wherein
 a depletion region is formed with the same layer as the lower first conductive layer and the lower second conductive layer between the pair of cells comprising the first cell and the second cell.   
     
     
         36 . The method of  claim 32 , wherein
 the forming of the lower first conductive layer and the lower second conductive layer on the substrate comprises   forming a first semiconductor layer on the substrate,   respectively injecting a first impurity and a second impurity having an opposite polarity to that of the first impurity to two neighboring regions of the first semiconductor layer by using a mask, and   patterning the first semiconductor injected with the first impurity and the second impurity.   
     
     
         37 . The method of  claim 32 , wherein
 the forming of the lower first conductive layer and the lower second conductive layer on the substrate comprises   selectively forming a semiconductor comprising a first impurity at a first region on the substrate and a semiconductor comprising a second impurity at a second region on the substrate by using a mask.   
     
     
         38 . The method of  claim 32 , wherein
 a depletion region is formed between the upper first conductive layer and the upper second conductive layer.   
     
     
         39 . The method of  claim 32 , further comprising
 removing a portion of the region between the upper first conductive layer and the upper second conductive layer, and forming a non-conductive member before forming the upper first conductive layer and the upper second conductive layer on the light absorption layer.   
     
     
         40 . The method of  claim 32 , wherein
 the forming of the upper first conductive layer and the upper second conductive layer on the light absorption layer comprises   forming a second semiconductor layer on the light absorption layer, and   respectively injecting a first impurity and a second impurity having an opposite polarity to that of the first impurity to two neighboring regions of the first semiconductor layer by using a mask.   
     
     
         41 . The method of  claim 32 , wherein
 the forming of the upper first conductive layer and the upper second conductive layer on the light absorption layer comprises   selectively forming a semiconductor comprising a first impurity at a first region on the substrate and a semiconductor comprising a second impurity at a second region on the substrate by using a mask.