Semiconductor device manufacturing method and polishing apparatus

Abstract

According to one embodiment, a semiconductor device manufacturing method is provided. In the semiconductor device manufacturing method, a process target film is formed on a semiconductor substrate, and the surface of the process target film is polished by a CMP method. The CMP method comprises heating a rotating polishing pad from a first temperature to a second temperature higher than the first temperature, and bringing the surface of the process target film into contact with the polishing pad heated to the second temperature.

1 . A semiconductor device manufacturing method comprising:
 forming a process target film on a semiconductor substrate; and   polishing a surface of the process target film by a CMP method,   wherein the CMP method comprises:   heating a rotating polishing pad from a first temperature to a second temperature higher than the first temperature; and   bringing the surface of the process target film into contact with the polishing pad heated to the second temperature.   
     
     
         2 . The method of  claim 1 , wherein a polishing rate of the process target film at the second temperature is higher than that at the first temperature. 
     
     
         3 . The method of  claim 1 , wherein in the bringing the surface of the process target film into contact with the polishing pad, the polishing pad remains constant at the second temperature. 
     
     
         4 . The method of  claim 1 , wherein the CMP method further comprises supplying a slurry to a surface of the polishing pad after heating the polishing pad to the second temperature. 
     
     
         5 . The method of  claim 1 , wherein the process target film is one of a Cu film, a W film, and an SiO 2  film. 
     
     
         6 . The method of  claim 1 , wherein the second temperature ranges from 20 to 70° C. 
     
     
         7 . A semiconductor device manufacturing method comprising:
 forming a process target film on a semiconductor substrate; and   polishing a surface of the process target film by a CMP method,   wherein the CMP method comprises:   heating a rotating polishing pad from a first temperature to a second temperature higher than the first temperature; and   bringing the surface of the process target film into contact with the polishing pad, and   the heating the polishing pad from the first temperature to the second temperature is performed in a time not more than 25% of a time of all steps of the CMP method.   
     
     
         8 . The method of  claim 7 , wherein a polishing rate of the process target film at the second temperature is higher than that at the first temperature. 
     
     
         9 . The method of  claim 7 , wherein, the heating the polishing pad from the first temperature to the second temperature and the bringing the surface of the process target film into contact with the polishing pad start simultaneously. 
     
     
         10 . The method of  claim 9 , wherein the CMP method further comprises supplying a slurry to a surface of the polishing pad simultaneously with the heating the polishing pad from the first temperature to the second temperature and the bringing the surface of the process target film into contact with the polishing pad. 
     
     
         11 . The method of  claim 7 , wherein the process target film is one of a Cu film, a W film, and an SiO 2  film. 
     
     
         12 . The method of  claim 7 , wherein the second temperature ranges from 20 to 70° C. 
     
     
         13 . A polishing apparatus comprising:
 a rotating polishing pad;   a slurry supply nozzle configured to supply a slurry to the polishing pad;   a polishing head configured to hold a process target film on a surface and polish the process target film by coming into contact with the polishing pad; and   a heating mechanism having, on a surface, a plate made of a material whose polishing rate by the slurry is lower than that of the process target film and configured to heat the polishing pad by coming into contact with the polishing pad while rotating.   
     
     
         14 . The apparatus of  claim 13 , further comprising a cooling nozzle configured to reduce a temperature of the polishing pad. 
     
     
         15 . The apparatus of  claim 13 , wherein the plate has a smooth surface without abrasive grains adhered. 
     
     
         16 . The apparatus of  claim 13 , wherein the heating mechanism controls temperature rise of the polishing pad by adjusting a rotating speed and a pressure to the polishing pad. 
     
     
         17 . The apparatus of  claim 14 , wherein the cooling nozzle reduces the temperature of the polishing pad by ejecting one of compressed air and nitrogen gas to the polishing pad. 
     
     
         18 . The apparatus of  claim 13 , wherein the material contains C and/or Si. 
     
     
         19 . The apparatus of  claim 18 , wherein the material contains one of diamond and SiC. 
     
     
         20 . The apparatus of  claim 13 , wherein the polishing rate of the material by the slurry is not more than 1/100 the polishing rate of the process target film by the slurry.