Semiconductor device and method of manufacture thereof

Abstract

A semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed between and thermally coupling the heat conductive portion and the cooling body.

1 . A semiconductor device comprising:
 a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which said heat conductive portion is exposed;   a cooling body secured to said semiconductor module by means of bonding material; and   heat conductive material formed between and thermally coupling said heat conductive portion and said cooling body.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein:
 said semiconductor module includes a semiconductor element encapsulated with said molded resin;   said bonding material is formed of insulating material;   said bonding material is formed to separate said heat conductive portion and said heat conductive material from the outside; and   said heat conductive portion is insulated from said semiconductor element.   
     
     
         3 . The semiconductor device according to  claim 1 , wherein:
 said cooling body has a cooling body groove formed therein; and   said heat conductive material is separated from said bonding material by said cooling body groove.   
     
     
         4 . The semiconductor device according to  claim 1 , wherein said bonding material is formed to extend to cover a side surface of said molded resin. 
     
     
         5 . The semiconductor device according to  claim 1 , wherein:
 said molded resin has a resin groove formed in a surface thereof facing said cooling body; and   said bonding material is formed to fill said resin groove.   
     
     
         6 . The semiconductor device according to  claim 1 , wherein:
 said bonding material is in contact with said molded resin; and   the surface of said molded resin in contact with said bonding material has a greater surface roughness than the surfaces of said molded resin which are not in contact with said bonding material.   
     
     
         7 . The semiconductor device according to  claim 1 , wherein:
 said bonding material is in contact with said molded resin; and   the portion of said molded resin in contact with said bonding material is more hydrophilic than the portions of said molded resin which are not in contact with said bonding material.   
     
     
         8 . The semiconductor device according to  claim 1 , wherein said heat conductive material is formed of electrically conductive material. 
     
     
         9 . The semiconductor device according to  claim 1 , wherein said heat conductive material is formed of silicone grease. 
     
     
         10 . A method of manufacturing a semiconductor device, comprising the steps of:
 forming heat conductive material on a surface of a cooling body;   forming bonding material on said surface of said cooling body, said bonding material having a projection;   forming a resin groove in a molded resin of a semiconductor module having a heat conductive portion which is formed of metal and which is exposed at a surface of said molded resin; and   integrally securing said cooling body and said semiconductor module together in such a manner that said projection is in contact with an inner wall of said resin groove, and that said heat conductive portion overlaps and is in contact with said heat conductive material.